STMICROELECTRONICS

单晶体管 双极, 达林顿, PNP, -100 V, 125 W, -10 A, 500 hFE

ROHM

双路场效应管, MOSFET, N和P沟道, 5.5 A, 20 V, 0.03 ohm, 4.5 V, 1.5 V

ROHM

晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0019 ohm, 10 V, 1.4 V

SOLID STATE

单晶体管 双极, NPN, 150 V, 150 MHz, 5 W, 300 mA, 40 hFE

ROHM

晶体管 双极预偏置/数字, 单路PNP, 50 V, -100 mA, 10 kohm, 10 kohm

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 55 A, 60 V, 0.018 ohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, N沟道, 150 A, 55 V, 4.9 mohm, 10 V, 4 V

INFINEON

单晶体管, IGBT, 40 A, 2.4 V, 160 W, 600 V, TO-220AB, 3 引脚

INFINEON

单晶体管, IGBT, 28 A, 2.2 V, 167 W, 600 V, TO-220AB, 3 引脚

IXYS SEMICONDUCTOR

晶体管, MOSFET, LINEAR L2?, N沟道, 15 A, 500 V, 480 mohm, 10 V, 2.5 V

ON SEMICONDUCTOR

单晶体管, IGBT, 100 A, 1.75 V, 595 W, 650 V, TO-247, 3 引脚

ROHM

双路场效应管, MOSFET, 双N沟道, 2 A, 100 V, 0.24 ohm, 10 V, 2.5 V

ROHM

单晶体管, IGBT, 场截止沟道, 48 A, 1.65 V, 174 W, 650 V, TO-247N, 3 引脚

ROHM

单晶体管, IGBT, 场截止沟道, 70 A, 1.6 V, 234 W, 650 V, TO-247N, 3 引脚

RENESAS

单晶体管, IGBT, 80 A, 1.7 V, 260.4 W, 600 V, TO-247, 3 引脚

ROHM

晶体管, MOSFET, P沟道, -4 A, -30 V, 0.032 ohm, -10 V, -2.5 V

ROHM

晶体管, MOSFET, N沟道, 2 A, 45 V, 0.13 ohm, 4.5 V, 1.5 V

ROHM

Silicon Carbide Power MOSFET, N Channel, 21 A, 650 V, 0.12 ohm, 18 V, 5.6 V

SEMIKRON

晶体管, IGBT阵列&模块, 双N沟道, 612 A, 1.75 V, 1.2 kV, Module

VISHAY

晶体管, MOSFET, N沟道, 8 A, 60 V, 0.03 ohm, 10 V, 2 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 6 ohm, 10 V, 4 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V

STMICROELECTRONICS

Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V

DIODES INC.

晶体管, MOSFET, N沟道, 1.8 A, 100 V, 600 mohm, 10 V, 4 V