ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 170 mA, 100 V, 1.2 ohm, 10 V, 1.7 V

INFINEON

单晶体管, IGBT, 通用, 60 A, 2.05 V, 187 W, 600 V, TO-247, 3 引脚

ROHM

双极晶体管阵列, NPN, 50 V, 300 mW, 150 mA, 120 hFE, SC-74

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, PNP, -200 V, 3 MHz, 150 W, -15 A, 400 hFE

NTE ELECTRONICS

达林顿双极性晶体管, 8A 80V

ROHM

晶体管, MOSFET, N沟道, 300 mA, 30 V, 0.8 ohm, 10 V, 2.5 V

INFINEON

功率场效应管, MOSFET, N沟道, 8 A, 800 V, 650 mohm, 10 V, 3 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 7 A, 500 V, 0.3 ohm, 30 V, 3.75 V

ON SEMICONDUCTOR

晶体管, MOSFET, P沟道, 5 A, -30 V, 100 mohm, 10 V, -1.75 V

SOLID STATE

双极性晶体管, NPN, 150V, TO-39

MULTICOMP

单晶体管 双极, 达林顿, PNP, 80 V, 80 W, 12 A, 1000 hFE

INFINEON

单晶体管, IGBT, 4 A, 2.1 V, 75 W, 600 V, TO-252, 3 引脚

VISHAY

晶体管, MOSFET, N沟道, 30 A, 60 V, 0.05 ohm, 10 V, 4 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, X2-Class, N沟道, 80 A, 650 V, 0.038 ohm, 10 V, 5 V

DIODES INC.

单晶体管 双极, PNP, -300 V, 50 MHz, 200 mW, -100 mA, 40 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 120 A, 60 V, 0.00166 ohm, 10 V, 3 V

ROHM

单晶体管, IGBT, 场截止沟道, 58 A, 1.6 V, 194 W, 650 V, TO-247N, 3 引脚

VISHAY

晶体管, MOSFET, P沟道, -60 A, -30 V, 0.0072 ohm, -4.5 V, -1.6 V

STMICROELECTRONICS

Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V

VISHAY

绝缘金属物质功率模块

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 53 A, 500 V, 80 mohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 15.2 A, 40 V, 6.7 mohm, 10 V, 2.8 V

INFINEON

晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0052 ohm, 10 V, 2.8 V

INFINEON

晶体管, MOSFET, N沟道, 59 A, 100 V, 18 mohm, 10 V, 4 V

IXYS SEMICONDUCTOR

单晶体管, IGBT, 隔离, 16 A, 5 V, 120 W, 1.7 kV, TO-247AD, 3 引脚