
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 54 A, 650 V, 0.033 ohm, 10 V, 5 V

NEXPERIA
单晶体管 双极, 开关, PNP, -40 V, 200 MHz, 200 mW, -600 mA, 100 hFE

ROHM
单晶体管, IGBT, 场截止沟道, 55 A, 1.65 V, 194 W, 650 V, TO-247N, 3 引脚

VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 2600 μohm, 10 V, 1.2 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1 A, 600 V, 4.4 ohm, 10 V, 3.75 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.5 A, 500 V, 0.33 ohm, 10 V, 5 V

MULTICOMP
双极晶体管

NEXPERIA
双极晶体管阵列, 双PNP, -45 V, 200 mW, -100 mA, 200 hFE, SOT-363

INFINEON
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.0183 ohm, 10 V, 2.1 V

INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0036 ohm, 10 V, 2.7 V

INFINEON
功率场效应管, MOSFET, N沟道, 16.4 A, 650 V, 0.18 ohm, 10 V, 3 V

ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.08 ohm, 4.5 V, 900 mV

STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.28 ohm, 10 V, 3 V

STMICROELECTRONICS
晶体管, MOSFET, N沟道, 5 A, 500 V, 0.73 ohm, 10 V, 3 V

STMICROELECTRONICS
单晶体管, IGBT, 80 A, 2.5 V, 250 W, 600 V, TO-247, 3 引脚

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.092 ohm, 10 V, 3 V

STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 0.162 ohm, 10 V, 3 V

VISHAY
晶体管, IGBT阵列&模块, N沟道, 200 A, 1.92 V, 500 W, 600 V, SOT-227

STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 80 V, 50 mohm, 10 V, 3 V