INFINEON

晶体管, MOSFET, N沟道, 42 A, 40 V, 0.0039 ohm, 10 V, 1 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 100 A, 40 V, 0.001 ohm, 10 V, 1.8 V

TEXAS INSTRUMENTS

晶体管, MOSFET, NexFET, N沟道, 100 A, 80 V, 0.0076 ohm, 10 V, 2.8 V

TEXAS INSTRUMENTS

场效应管, MOSFET, N沟道, 80V, 100A, TO-220-3

ON SEMICONDUCTOR/FAIRCHILD

晶体管, P沟道

INFINEON

晶体管, MOSFET, N沟道, 82 A, 75 V, 13 mohm, 10 V, 4 V

INFINEON

双路场效应管, MOSFET, 双P沟道, 2.3 A, -30 V, 250 mohm, -10 V, -1 V

VISHAY

功率场效应管, MOSFET, N沟道, 5.5 A, 600 V, 750 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 61 A, 55 V, 14 mohm, 10 V, 3 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 132 A, 500 V, 0.039 ohm, 10 V, 5 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 88 A, 300 V, 40 mohm, 10 V, 5 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 3 A, 1.2 kV, 4.5 ohm, 10 V, 5 V

ON SEMICONDUCTOR

单晶体管, IGBT, 60 A, 1.9 V, 189 W, 600 V, TO-247, 3 引脚

ON SEMICONDUCTOR

单晶体管, IGBT, 80 A, 2 V, 417 W, 600 V, TO-247, 3 引脚

ROHM

双路场效应管, MOSFET, N和P沟道, 4.5 A, 40 V, 0.0346 ohm, 10 V, 2.5 V

ROHM

功率场效应管, MOSFET, N沟道, 29 A, 650 V, 0.12 ohm, 18 V, 4 V

STMICROELECTRONICS

Power MOSFET, N Channel, 34 A, 600 V, 0.085 ohm, 10 V, 4 V

ON SEMICONDUCTOR

单晶体管 双极, NPN, -100 V, 3 MHz, 125 W, -25 A, 15 hFE

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0137 ohm, 10 V, 2.8 V

INFINEON

单晶体管, IGBT, 40 A, 2.5 V, 160 W, 600 V, TO-247AC, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 120 A, 30 V, 6 mohm, 10 V, 1 V

INFINEON

双路场效应管, MOSFET, 双N沟道, 8.1 A, 30 V, 0.014 ohm, 4.5 V, 1.1 V

ON SEMICONDUCTOR

单晶体管, IGBT, 100 A, 1.7 V, 595 W, 600 V, TO-247, 3 引脚

NTE ELECTRONICS

双极性晶体管

NEXPERIA

晶体管, MOSFET, N沟道, 25 A, 100 V, 0.022 ohm, 10 V, 3 V