ROHM

单晶体管, IGBT, 场截止沟道, 40 A, 1.6 V, 144 W, 650 V, TO-247N, 3 引脚

ROHM

单晶体管, IGBT, 场截止沟道, 70 A, 1.6 V, 234 W, 650 V, TO-247N, 3 引脚

MULTICOMP

单晶体管 双极, 达林顿, PNP, -100 V, 70 W, -8 A, 1000 hFE

MULTICOMP

单晶体管 双极, NPN, 350 V, 5 MHz, 125 W, 8 A, 60 hFE

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, NPN, 100 V, 70 W, 10 A, 750 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 32 A, 200 V, 68 mohm, 10 V, 4 V

INFINEON

单晶体管, IGBT, 11.8 A, 2.16 V, 34 W, 600 V, TO-220FP, 3 引脚

IXYS SEMICONDUCTOR

晶体管, MOSFET, 极性FET, N沟道, 200 A, 100 V, 7.5 mohm, 15 V, 5 V

SEMELAB

单晶体管 双极, 音频, PNP, -230 V, 35 MHz, 300 W, -18 A, 70 hFE

ON SEMICONDUCTOR

单晶体管 双极, PNP, -300 V, 80 W, -8 A, 15 hFE

ROHM

单晶体管, IGBT, 场截止沟道, 70 A, 1.65 V, 234 W, 650 V, TO-247N, 3 引脚

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 650 mohm, 10 V, 3.75 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.84 ohm, 10 V, 3 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 4 A, 700 V, 1 ohm, 10 V, 3.75 V

TOSHIBA

单晶体管 双极, 音频, PNP, -230 V, 30 MHz, 150 W, -15 A, 160 hFE

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 9 A, 800 V, 0.78 ohm, 10 V, 3.75 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, 1.2 A, -60 V, 170 mohm, -10 V, -1.6 V

FUJI ELECTRIC

单晶体管, IGBT, 95 A, 1.5 V, 360 W, 600 V, TO-247, 3 引脚

INFINEON

单晶体管, IGBT, 18V, 57A

NTE ELECTRONICS

双极性晶体管, PNP, -160V

NTE ELECTRONICS

双极性晶体管, NPN, 80V TO-220

NEXPERIA

单晶体管 双极, PNP, -60 V, 90 MHz, 2.1 W, -5 A, 265 hFE

NEXPERIA

单晶体管 双极, 开关, PNP, -60 V, 200 MHz, 200 mW, -600 mA, 100 hFE

ROHM

单晶体管, IGBT, 场截止沟道, 58 A, 1.6 V, 194 W, 650 V, TO-247N, 3 引脚

VISHAY

晶体管, N沟道