ON SEMICONDUCTOR

单晶体管 双极, PNP, -100 V, 150 W, -12 A, 100 hFE

DIODES INC.

功率场效应管, MOSFET, N沟道, 6 A, 900 V, 1.7 ohm, 10 V, 4 V

DIODES INC.

功率场效应管, MOSFET, N沟道, 2.5 A, 900 V, 5.5 ohm, 10 V, 4 V

DIODES INC.

功率场效应管, MOSFET, N沟道, 2.5 A, 950 V, 5.5 ohm, 10 V, 4 V

DIODES INC.

晶体管, MOSFET, N沟道, 150 A, 40 V, 0.0034 ohm, 10 V, 3 V

DIODES INC.

晶体管, MOSFET, N沟道, 130 A, 60 V, 0.006 ohm, 10 V, 4 V

ROHM

晶体管 双极预偏置/数字, NPN, 单路NPN, 50 V, 100 mA, 2.2 kohm, 2.2 kohm, 1 电阻比率

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 通用, 54 A, 2.7 V, 167 W, 600 V, TO-247, 3 引脚

INFINEON

MOSFET, N-CH, 75V, 87A, TO-220AB-3

VISHAY

场效应管, MOSFET, N沟道

INFINEON

单晶体管, IGBT, 标准速度, N通道, 57 A, 1.75 V, 200 W, 1.2 kV, TO-247AD, 3 引脚

INFINEON

单晶体管, IGBT, 13 A, 1.8 V, 90 W, 600 V, TO-220AB, 3 引脚

INFINEON

单晶体管, IGBT, 140 A, 1.7 V, 454 W, 600 V, TO-247AC, 3 引脚

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, X2-Class, N沟道, 46 A, 650 V, 0.069 ohm, 10 V, 5.5 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, 极性FET, N沟道, 140 A, 300 V, 24 mohm, 10 V, 5 V

IXYS SEMICONDUCTOR

单晶体管, IGBT, 60 A, 3.5 V, 300 W, 1.2 kV, TO-263, 3 引脚

MICROCHIP

晶体管, MOSFET, N沟道, 64 A, 25 V, 0.01 ohm, 4.5 V, 1.35 V

ROHM

单晶体管, IGBT, 场截止沟道, 40 A, 1.65 V, 144 W, 650 V, TO-247N, 3 引脚

VISHAY

晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00121 ohm, 10 V, 2 V

STMICROELECTRONICS

单晶体管, IGBT, 6 A, 2.8 V, 25 W, 1.2 kV, TO-220FP, 3 引脚

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 6 A, 600 V, 450 mohm, 10 V, 3.75 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 16 A, 600 V, 0.2 ohm, 10 V, 3 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 19.5 A, 600 V, 0.15 ohm, 10 V, 4 V

STMICROELECTRONICS

Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V

ROHM

双路场效应管, MOSFET, 双N沟道, 2.5 A, 30 V, 0.065 ohm, 4.5 V, 1.5 V