ROHM

双路场效应管, MOSFET, 双N沟道, 200 mA, 50 V, 1.6 ohm, 4.5 V, 800 mV

INFINEON

MOSFET, N CHANNEL, 25V, 49A, PQFN-5

INFINEON

功率场效应管, MOSFET, N沟道, 46 A, 650 V, 0.04 ohm, 10 V, 3.5 V

VISHAY

晶体管, MOSFET, N沟道, 32 A, 500 V, 160 mohm, 10 V, 5 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, X2-Class, N沟道, 4 A, 650 V, 0.85 ohm, 10 V, 5 V

VISHAY

MOSFET, DUAL N CHANNEL, 30V, 7.1A, SOIC-8

MULTICOMP

单晶体管 双极, NPN, 80 V, 80 W, 8 A, 20000 hFE

SOLID STATE

达林顿晶体管, NPN, 10A, TO-220

ROHM

单晶体管 双极, PNP, -120 V, 140 MHz, 200 mW, -50 mA, 180 hFE

MULTICOMP

单晶体管 双极, NPN, 45 V, 500 mW, 1 A, 250 hFE

NXP

RF WIDEBAND TRANSISTOR, NPN, 12V, 6GHZ, 4-SOT-143B

INFINEON

功率场效应管, MOSFET, N沟道, 22.4 A, 650 V, 0.135 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 38 A, 300 V, 0.056 ohm, 10 V, 5 V

IXYS SEMICONDUCTOR

单晶体管, IGBT, 84 A, 2.1 V, 290 W, 1.2 kV, TO-247AD, 3 引脚

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 94 A, 300 V, 0.036 ohm, 10 V, 5 V

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率

VISHAY

双路场效应管, MOSFET, 双P沟道, -8 A, -40 V, 0.021 ohm, -10 V, -1.2 V

ON SEMICONDUCTOR

单晶体管 双极, PNP, -100 V, 160 W, -20 A, 100 hFE

INFINEON

晶体管, MOSFET, N沟道, 43 A, 150 V, 0.042 ohm, 10 V, 2 V

SEMELAB

晶体管, 射频FET, 40 V, 2 A, 17.5 W, 1 MHz, 2 GHz, SOIC

VISHAY

场效应管, MOSFET, P沟道, HEXDIP

INFINEON

晶体管, MOSFET, N沟道, 14 A, 150 V, 180 mohm, 10 V, 5.5 V

INFINEON

单晶体管, IGBT, 60 A, 1.7 V, 250 W, 650 V, TO-247AC, 3 引脚

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, X2-Class, N沟道, 8 A, 650 V, 0.5 ohm, 10 V, 5 V

ROHM

双路场效应管, MOSFET, 双P沟道, -5.5 A, -12 V, 0.015 ohm, -4.5 V, -1 V