VISHAY

晶体管, MOSFET, N沟道, 38.3 A, 30 V, 0.006 ohm, 10 V, 1.2 V

INFINEON

功率场效应管, MOSFET, N沟道, 6.2 A, 650 V, 0.68 ohm, 10 V, 3 V

STMICROELECTRONICS

Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 3.5 A, 600 V, 850 mohm, 10 V, 3.75 V

STMICROELECTRONICS

单晶体管 双极, 达林顿, PNP, -60 V, 2 W, 8 A, 20000 hFE

INFINEON

晶体管, MOSFET, N沟道, 2.5 A, 200 V, 170 mohm, 10 V, 5.5 V

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 600V, 49A

NEXPERIA

单晶体管 双极, PNP, 80 V, 145 MHz, 650 mW, 1 A, 63 hFE

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 21 A, 500 V, 250 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0054 ohm, 10 V, 1 V

NEXPERIA

双极晶体管阵列, 双PNP, -65 V, 220 mW, -100 mA, 110 hFE, SOT-363

SEMELAB

单晶体管 双极, PNP, 100 V, 125 W, 16 A, 3000 hFE

STMICROELECTRONICS

单晶体管 双极, 达林顿, PNP, 100 V, 33 W, -12 A, 1000 hFE

INFINEON

晶体管, MOSFET, BRT, P沟道, -40 A, -30 V, 0.0065 ohm, -10 V, -2.5 V

SEMELAB

晶体管, MOSFET, N沟道, 8 A, 200 V, 1.5 ohm, 1.5 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0018 ohm, 10 V, 1.7 V

INFINEON

场效应管, MOSFET, P沟道, -30V, -11A, PQFN

INFINEON

晶体管, MOSFET, N沟道, 9.9 A, 30 V, 12 mohm, 4.5 V, 1.1 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, X2-Class, N沟道, 22 A, 650 V, 0.145 ohm, 10 V, 5 V

ON SEMICONDUCTOR

单晶体管, IGBT, 100 A, 1.64 V, 595 W, 650 V, TO-247, 3 引脚

NTE ELECTRONICS

收发器芯片, NPN

NEXPERIA

双极晶体管阵列, PNP, -20 V, 2.3 W, -6.3 A, 250 hFE, SOIC

VISHAY

MOSFET, N CHANNEL, 12V, 34A, SOIC-8

VISHAY

晶体管, N沟道

SEMIKRON

晶体管, IGBT阵列&模块, 双NPN, 422 A, 1.85 V, 1.2 kV, Module