STMICROELECTRONICS

单晶体管, IGBT, 60 A, 2.5 V, 200 W, 600 V, TO-220, 3 引脚

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 120 A, 40 V, 4.6 mohm, 10 V, 4 V

VISHAY

晶体管, IGBT阵列&模块, HEXFRED, N沟道, 27 A, 1.6 V, 63 W, 600 V, SIP

NEXPERIA

单晶体管 双极, NPN, 20 V, 260 MHz, 250 mW, 30 mA, 65 hFE

MULTICOMP

单晶体管 双极, NPN, 80 V, 500 mW, 1 A, 250 hFE

NEXPERIA

晶体管 双极预偏置/数字, BRT, 双路 PNP, 50 V, -100 mA, 4.7 kohm

NEXPERIA

晶体管, MOSFET, N沟道, 34 A, 100 V, 0.0243 ohm, 10 V, 3 V

INFINEON

晶体管, IGBT阵列&模块, N沟道, 22 A, 1.55 V, 65 W, 600 V, Module

INFINEON

单晶体管, IGBT, 50 A, 1.6 V, 305 W, 650 V, TO-247, 3 引脚

INFINEON

功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.084 ohm, 10 V, 3.5 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, X2-Class, N沟道, 80 A, 650 V, 0.038 ohm, 10 V, 5 V

ON SEMICONDUCTOR

单晶体管, IGBT, 80 A, 1.7 V, 366 W, 600 V, TO-247, 3 引脚

NTE ELECTRONICS

双极性晶体管, NPN, 24V

NTE ELECTRONICS

达林顿双极性晶体管

ROHM

功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.26 ohm, 10 V, 4 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 6 A, 500 V, 340 mohm, 10 V, 3.75 V

ROHM

单晶体管 双极, AEC-Q101, PNP, -50 V, 320 MHz, 2 W, -2 A, 180 hFE

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 250V

INFINEON

单晶体管, IGBT, 通用, 16 A, 2.2 V, 70 W, 1.2 kV, TO-247, 3 引脚

INFINEON

晶体管, MOSFET, P沟道, 40 A, -100 V, 60 mohm, -10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 9.1 A, 200 V, 80 mohm, 10 V, 4.9 V

VISHAY

晶体管, MOSFET, N沟道, 11 A, 400 V, 550 mohm, 10 V, 4 V

IXYS SEMICONDUCTOR

单晶体管, IGBT, 33 A, 2.1 V, 130 W, 1.2 kV, TO-220AB, 3 引脚

IXYS SEMICONDUCTOR

Silicon Carbide IGBT Single Transistor, 40 A, 2.5 V, 180 W, 1.2 kV, TO-247AD, 3 Pins