NTE ELECTRONICS

晶体管, PNP, 1A, TO-1

ROHM

单晶体管, IGBT, 场截止沟道, 16 A, 1.65 V, 94 W, 650 V, TO-263S, 3 引脚

ROHM

Silicon Carbide Power MOSFET, N Channel, 72 A, 1.2 kV, 0.03 ohm, 18 V, 5.6 V

TOSHIBA

功率场效应管, MOSFET, N沟道, 40 A, 600 V, 0.065 ohm, 10 V, 3 V

DIODES INC.

晶体管, MOSFET, P沟道, 3.7 A, -70 V, 160 mohm, 10 V, -1 V

INFINEON

晶体管, MOSFET, N沟道, 75 A, 40 V, 4.3 mohm, 10 V, 2 V

DIODES INC.

单晶体管 双极, NPN, 20 V, 150 MHz, 600 mW, 100 mA, 330 hFE

ROHM

晶体管 双极预偏置/数字, PNP, 单路PNP, -50 V, -100 mA, 2.2 kohm, 2.2 kohm, 1 电阻比率

INFINEON

单晶体管, IGBT, 50 A, 2 V, 333 W, 600 V, TO-247, 3 引脚

INFINEON

单晶体管, IGBT, 40 A, 2.05 V, 303 W, 600 V, TO-247, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 140 A, 75 V, 7 mohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, P沟道, 1.1 A, -100 V, 1.2 ohm, -10 V, -4 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 24 A, 900 V, 0.42 ohm, 10 V, 3.5 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 50 A, 600 V, 0.16 ohm, 10 V, 5 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, HiPerFET, N沟道, 52 A, 300 V, 60 mohm, 10 V, 4 V

IXYS SEMICONDUCTOR

单晶体管 双极, X2-Class, N沟道, 76 A, 650 V, 0.03 ohm, 10 V, 5 V

NTE ELECTRONICS

双极晶体管

ON SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.15 ohm, 8 V, 2.1 V

NEXPERIA

晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 22 kohm, 22 kohm

ROHM

双路场效应管, MOSFET, 双N沟道, 9 A, 30 V, 0.0125 ohm, 4.5 V, 1.5 V

ROHM

单晶体管, IGBT, 场截止沟道, 50 A, 1.6 V, 174 W, 650 V, TO-247N, 3 引脚

VISHAY

场效应管, MOSFET, N沟道, 150V 85A TO-220AB

INFINEON

晶体管, MOSFET, N沟道, 90 A, 60 V, 3.3 mohm, 10 V, 3 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 3.5 A, 1 kV, 3.7 ohm, 10 V, 3.75 V

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 500 mA, 100 hFE