VISHAY

晶体管, MOSFET, N沟道, 18 A, 500 V, 0.225 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 34.1 A, 600 V, 0.1 ohm, 10 V, 4 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 4.2 A, 620 V, 1.28 ohm, 10 V, 3.75 V

NEXPERIA

单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 100 mA, 420 hFE

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 310 mA, 60 V, 0.86 ohm, 10 V, 1 V

SEMIKRON

晶体管, IGBT阵列&模块, 双N沟道, 400 A, 3.3 V, 1.2 kV, Module

ON SEMICONDUCTOR

单晶体管 双极, NPN, 60 V, 200 kHz, 150 W, 20 A, 5 hFE

MULTICOMP

双极性晶体管, NPN, 90V, TO-3

ROHM

单晶体管 双极, NPN, 80 V, 100 MHz, 500 mW, 500 mA, 82 hFE

NEXPERIA

单晶体管 双极, NPN, 80 V, 180 MHz, 500 mW, 1 A, 100 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 6 A, 30 V, 80 mohm, 10 V, 2 V

DIODES INC.

单晶体管 双极, 达林顿, NPN, 120 V, 150 MHz, 1 W, 1 A, 100000 hFE

INFINEON

晶体管, MOSFET, N沟道, 35 A, 30 V, 8 mohm, 10 V, 1 V

INFINEON

晶体管, MOSFET, N沟道, 30 A, 200 V, 85 mohm, 10 V, 4 V

VISHAY

场效应管, MOSFET, N沟道, 74W, TO-262

INFINEON

晶体管, MOSFET, P沟道, 12 A, -55 V, 175 mohm, -10 V, -4 V

INFINEON

晶体管, MOSFET, N沟道, 25 A, 200 V, 60 mohm, 10 V, 5 V

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 600V, 22A

IXYS SEMICONDUCTOR

晶体管, MOSFET, 极性FET, N沟道, 110 A, 100 V, 15 mohm, 10 V, 5 V

ON SEMICONDUCTOR

单晶体管, IGBT, 100 A, 1.45 V, 223 W, 600 V, TO-247, 3 引脚

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 51 A, 600 V, 0.047 ohm, 10 V, 4 V

ROHM

晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 100 kohm

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0042 ohm, 10 V, 1 V

INTERNATIONAL RECTIFIER

场效应管, MOSFET

INFINEON

晶体管, MOSFET, N沟道, 327 A, 40 V, 0.0014 ohm, 10 V, 2.5 V