ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, 3.4 A, -30 V, 0.105 ohm, -10 V, -1.8 V

INFINEON

晶体管 双极-射频, NPN, 4.5 V, 25 GHz, 75 mW, 25 mA, 60 hFE

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, PNP, -100 V, 1.75 W, -8 A, 12 hFE

INFINEON

晶体管 双极-射频, AEC-Q101, NPN, 9 V, 14 GHz, 210 mW, 35 mA, 120 hFE

NEXPERIA

晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 22 kohm, 22 kohm

INFINEON

晶体管, MOSFET, N沟道, 71 A, 100 V, 10 mohm, 10 V, 1.85 V

VISHAY

双路场效应管, MOSFET, 双P沟道, -8 A, -30 V, 24 mohm, -10 V, -3 V

ON SEMICONDUCTOR

双极晶体管阵列, 双路N和P通道, 30 V, 380 mW, 100 mA, 420 hFE, SOT-363

INFINEON

晶体管, MOSFET, N沟道, 14 A, 150 V, 0.18 ohm, 10 V, 5.5 V

VISHAY

晶体管, MOSFET, N沟道, 2.3 A, 60 V, 130 mohm, 10 V, 1 V

ON SEMICONDUCTOR

场效应管, MOSFET, P沟道, -20V, 760mA SC-75

INFINEON

晶体管, MOSFET, P沟道, -6.6 A, -100 V, 480 mohm, -10 V, -4 V

NTE ELECTRONICS

晶体管, NPN, 40V

INFINEON

晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0126 ohm, 10 V, 4 V

NEXPERIA

单晶体管 双极, NPN, PNP, 65 V, 100 MHz, 200 mW, 100 mA, 200 hFE

VISHAY

MOSFET, N CHANNEL, 30V, 9.5A, SOIC-8

NEXPERIA

晶体管, MOSFET, N沟道, 57 A, 100 V, 0.013 ohm, 10 V, 3 V

VISHAY

晶体管, MOSFET, N沟道, 13.5 A, 30 V, 0.007 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 20 A, 60 V, 0.008 ohm, 10 V, 1.7 V

VISHAY

双路场效应管, MOSFET, 双P沟道, -6 A, -40 V, 0.048 ohm, -4.5 V, -3 V

ON SEMICONDUCTOR

双极晶体管阵列, NPN, PNP, 65 V, 380 mW, 100 mA, 200 hFE, SOT-363

VISHAY

晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0058 ohm, 10 V, 1.4 V

NEXPERIA

单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 100 mA, 420 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 50 A, 60 V, 12.6 mohm, 10 V, 3 V

ON SEMICONDUCTOR

TRANSISTOR, BIPOLAR, NPN, 20V, 1A, SC-89-3