NTE ELECTRONICS

双极性晶体管, PNP, 400V V(BR)CEO, 2A I(C),TO-251VAR

ROHM

单晶体管, IGBT, 场截止沟道, 30 A, 1.65 V, 133 W, 650 V, TO-263S, 3 引脚

ROHM

晶体管, MOSFET, N沟道, 6.5 A, 60 V, 0.024 ohm, 10 V, 2.5 V

VISHAY

MOSFET, N CHANNEL, 30V, 0.0032OHM, 30.5A, SOIC-8

SEMIKRON

晶体管, IGBT阵列&模块, 双N沟道, 114 A, 1.85 V, 1.2 kV, Module

STMICROELECTRONICS

晶体管, IGBT, TO247

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 13 A, 600 V, 550 mohm, 10 V, 3.75 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V

ROHM

晶体管 双极预偏置/数字, 双路, 双路 PNP, 50 V, -100 mA, 4.7 kohm

ROHM

晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 47 kohm, 47 kohm

ROHM

晶体管 双极预偏置/数字, 双路NPN, 双路 NPN, 50 V, 100 mA, 10 kohm, 47 kohm, 0.213 电阻比率

DIODES INC.

单晶体管 双极, PNP, 80 V, 120 MHz, 1.6 W, 5 A, 250 hFE

ROHM

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 10 kohm, 47 kohm, 0.22 电阻比率

INFINEON

单晶体管, IGBT, 17 A, 1.95 V, 45 W, 600 V, TO-220FP, 3 引脚

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 150 A, 150 V, 11 mohm, 10 V, 5 V

ROHM

晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm

ROHM

晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 10 kohm, 10 kohm

INFINEON

场效应管, MOSFET, N沟道, 30V, 11mA

INFINEON

晶体管, MOSFET, N沟道, 43 A, 60 V, 12.6 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 100 A, 30 V, 7 mohm, 10 V, 1 V

INFINEON

晶体管, MOSFET, N沟道, 91 A, 30 V, 0.0069 ohm, 10 V, 3 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, 极性FET, N沟道, 200 A, 100 V, 7.5 mohm, 15 V, 5 V

ON SEMICONDUCTOR

单晶体管, IGBT, 70 A, 1.7 V, 300 W, 600 V, TO-247, 3 引脚

NTE ELECTRONICS

双极性晶体管, 2A

ROHM

功率场效应管, MOSFET, N沟道, 76 A, 600 V, 0.04 ohm, 10 V, 5 V