IXYS SEMICONDUCTOR

单晶体管, IGBT, 75 A, 2.5 V, 350 W, 1.7 kV, TO-247AD, 3 引脚

IXYS SEMICONDUCTOR

晶体管, MOSFET, 极性FET, N沟道, 100 A, 250 V, 27 mohm, 10 V, 5 V

IXYS SEMICONDUCTOR

单晶体管, IGBT, 60 A, 2.2 V, 455 W, 650 V, TO-247, 3 引脚

SOLID STATE

达林顿晶体管, NPN, 20A, TO-3

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率

ON SEMICONDUCTOR

晶体管, 带电阻, 50V, 10K/10KΩ, SC88

NTE ELECTRONICS

达林顿双极性晶体管

NEXPERIA

晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 10 kohm

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V

MULTICOMP

单晶体管 双极, PNP, -60 V, 125 MHz, 500 mW, -1 A, 250 hFE

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 4.7 kohm, 10 kohm

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 80 A, 55 V, 8 mohm, 10 V, 3 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 3.5 A, 55 V, 60 mohm, 5 V, 2.5 V

INFINEON

晶体管, IGBT阵列&模块, N沟道, 100 A, 1.45 V, 275 W, 600 V, Module

DIODES INC.

单晶体管 双极, NPN, 15 V, 150 MHz, 2 W, 4 A, 500 hFE

VISHAY

场效应管, MOSFET, P沟道, -200V, 3.8A, POWERPAK

NEXPERIA

单晶体管 双极, NPN, 50 V, 250 MHz, 250 mW, 200 mA, 210 hFE

MICRO COMMERCIAL COMPONENTS

双极性晶体管, NPN, 45V, SOT-23

ROHM

晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm

INFINEON

场效应管, MOSFET, N沟道

INFINEON

晶体管, MOSFET, N沟道, 42 A, 75 V, 0.0128 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 31 A, 100 V, 39 mohm, 10 V, 4 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 28 A, 600 V, 0.26 ohm, 10 V, 5 V

IXYS SEMICONDUCTOR

单晶体管, IGBT, 44 A, 3.5 V, 200 W, 1.7 kV, ISOPLUS i4-PAC, 3 引脚

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 4 A, 800 V, 3 ohm, 10 V, 5.5 V