SOLID STATE

达林顿晶体管, NPN, 30A, TO-3

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 1.6 V

ON SEMICONDUCTOR

单晶体管, IGBT, 120 A, 2 V, 298 W, 600 V, TO-247, 3 引脚

ROHM

晶体管, MOSFET, N沟道, 7 A, 30 V, 0.02 ohm, 10 V, 2.5 V

ROHM

功率场效应管, MOSFET, N沟道, 55 A, 1.2 kV, 0.04 ohm, 18 V, 5.6 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.37 ohm, 10 V, 4 V

NEXPERIA

单晶体管 双极, 开关, NPN, 40 V, 250 mW, 800 mA, 40 hFE

ON SEMICONDUCTOR

单晶体管 双极, NPN, 80 V, 2 MHz, 300 mW, 50 A, 15 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 228 A, 55 V, 0.0023 ohm, 10 V, 2.3 V

STMICROELECTRONICS

单晶体管 双极, NPN, 450 V, 85 W, 5 A, 38 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 9 A, 30 V, 0.014 ohm, 10 V, 2.1 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 40A, 30V

FUJI ELECTRIC

单晶体管, IGBT, 28 A, 1.85 V, 155 W, 1.2 kV, TO-247, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 75 A, 55 V, 0.006 ohm, 10 V, 4 V

INFINEON

单晶体管, IGBT, 75 A, 2 V, 428 W, 600 V, TO-247, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 170 A, 40 V, 3.6 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 160 A, 60 V, 4.2 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, P沟道, 13 A, -100 V, 205 mohm, -10 V, -4 V

INFINEON

单晶体管, IGBT, 20 A, 3.1 V, 100 W, 1.2 kV, TO-247AC, 3 引脚

INFINEON

单晶体管, IGBT, N通道, 140 A, 1.65 V, 483 W, 600 V, TO-247AC, 3 引脚

IXYS SEMICONDUCTOR

晶体管, MOSFET, Q3-Class, N沟道, 100 A, 500 V, 0.049 ohm, 10 V, 6.5 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 12 A, 900 V, 900 mohm, 10 V, 3.5 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 150 A, 300 V, 0.019 ohm, 10 V, 5 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, Q-Class, N沟道, 27 A, 800 V, 0.32 ohm, 10 V, 4.5 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 90 A, 200 V, 23 mohm, 10 V, 4 V