IXYS SEMICONDUCTOR

晶体管, MOSFET, 极性FET, N沟道, 88 A, 300 V, 40 mohm, 10 V, 5 V

ON SEMICONDUCTOR

双路场效应管, MOSFET, 双N沟道, 630 mA, 20 V, 0.29 ohm, 4.5 V, 920 mV

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率

ROHM

晶体管, MOSFET, N沟道, 2.5 A, 30 V, 0.048 ohm, 4.5 V, 1.5 V

VISHAY

功率场效应管, MOSFET, N沟道, 32.4 A, 650 V, 0.09 ohm, 10 V, 4 V

VISHAY

功率场效应管, MOSFET, N沟道, 31.6 A, 650 V, 0.095 ohm, 10 V, 4 V

VISHAY

功率场效应管, MOSFET, N沟道, 87 A, 650 V, 0.025 ohm, 10 V, 4 V

SEMIKRON

晶体管, IGBT阵列&模块, 双N沟道, 130 A, 2.1 V, 600 V, Module

STMICROELECTRONICS

Power MOSFET, Mdmesh DM2, N Channel, 34 A, 600 V, 0.085 ohm, 10 V, 4 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 80 A, 40 V, 0.0054 ohm, 10 V, 2 V

VISHAY

晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0027 ohm, 10 V, 1 V

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 65 V, 100 MHz, 300 mW, 100 mA, 200 hFE

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 VDC, 0.8 V

NEXPERIA

单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 500 mA, 100 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, 40V, 1A, SOT-23

MULTICOMP

双极性晶体管, NPN, 80V, TO-3

ROHM

单晶体管 双极, NPN, 80 V, 200 MHz, 10 W, 5 A, 120 hFE

INFINEON

晶体管, MOSFET, N沟道, 195 A, 60 V, 0.0019 ohm, 10 V, 1 V

TEXAS INSTRUMENTS

场效应管, MOSFET, N沟道, 100V, 150A, TO-220-3

FUJI ELECTRIC

功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V

INFINEON

晶体管, IGBT阵列&模块, N沟道, 22 A, 1.55 V, 81 W, 600 V, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 27 A, 1.55 V, 94 W, 600 V, Module

INFINEON

单晶体管, IGBT, 15 A, 2.05 V, 130 W, 600 V, TO-263, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 25 A, 200 V, 60 mohm, 10 V, 3 V

INFINEON

MOSFET, N-CH, 75V, 183A, TO-220AB-3