VISHAY

绝缘金属物质功率模块

STMICROELECTRONICS

Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 24 A, 800 V, 400 mohm, 10 V, 5 V

ROHM

单晶体管 双极, 高速, NPN, 60 V, 300 MHz, 200 mW, 500 mA, 120 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 93 A, 30 V, 4.9 mohm, 10 V, 2.5 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道

INFINEON

晶体管, MOSFET, N沟道, 195 A, 40 V, 0.001 ohm, 10 V, 2.2 V

VISHAY

晶体管, MOSFET, N沟道, 9 A, 200 V, 0.4 ohm, 5 V, 2 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 44 A, 800 V, 190 mohm, 10 V, 5 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 98 A, 500 V, 0.05 ohm, 10 V, 5 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, X2-Class, N沟道, 48 A, 650 V, 0.065 ohm, 10 V, 5 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, LINEAR L2?, N沟道, 40 A, 500 V, 170 mohm, 10 V, 2.5 V

NTE ELECTRONICS

双极性晶体管

ROHM

双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.02 ohm, 10 V, 2.5 V

VISHAY

MOSFET, P CHANNEL, -150V, -8.9A, POWERPAK 1212-8

VISHAY

双路场效应管, MOSFET, 双N沟道, 7 A, 60 V, 0.033 ohm, 10 V, 2 V

VISHAY

晶体管, MOSFET, N沟道, 30 A, 55 V, 0.016 ohm, 10 V, 2 V

STMICROELECTRONICS

Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V

STMICROELECTRONICS

Power MOSFET, Mdmesh DM2, N Channel, 12 A, 600 V, 0.26 ohm, 10 V, 3 V

ROHM

双路场效应管, MOSFET, 双N沟道, 250 mA, 60 V, 1.7 ohm, 10 V, 2.3 V

NEXPERIA

晶体管 双极预偏置/数字, BRT, 双路 PNP, -50 V, -100 mA, 47 kohm, 47 kohm, 1 电阻比率

SOLID STATE

晶体管, JFET, JFET, -30 V, 50 mA, 50 mA, -10 V, TO-18, JFET

INFINEON

晶体管, MOSFET, N沟道, 240 A, 40 V, 0.001 ohm, 10 V, 3.9 V

NEXPERIA

单晶体管 双极, PNP, -80 V, 200 MHz, 1.25 W, -1 A, 2000 hFE

STMICROELECTRONICS

单晶体管 双极, NPN, 400 V, 80 W, 5 A, 10 hFE