INFINEON

晶体管, IGBT阵列&模块, N沟道, 28 A, 1.85 V, 130 W, 1.2 kV, Module

INFINEON

晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0016 ohm, 10 V, 1.7 V

INFINEON

单晶体管, IGBT, 140 A, 1.7 V, 455 W, 650 V, TO-247AC, 3 引脚

VISHAY

晶体管, MOSFET, N沟道, 5.2 A, 200 V, 0.8 ohm, 5 V, 2 V

IXYS SEMICONDUCTOR

单晶体管, IGBT, 50 A, 2.96 V, 300 W, 1.2 kV, TO-268, 3 引脚

ON SEMICONDUCTOR

单晶体管, IGBT, 80 A, 2 V, 535 W, 1.2 kV, TO-247, 3 引脚

NTE ELECTRONICS

晶体管套件

ON SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 9 A, 600 V, 0.29 ohm, 8 V, 2.1 V

ROHM

晶体管, MOSFET, N沟道, 7 A, 500 V, 1 ohm, 10 V, 4 V

VISHAY

功率场效应管, MOSFET, N沟道, 19.8 A, 650 V, 0.157 ohm, 10 V, 4 V

THAT CORPORATION

双极晶体管阵列, NPN, PNP, 40 V, 20 mA, 100 hFE, DIP

INFINEON

单晶体管, IGBT, 108 A, 1.7 V, 390 W, 1.2 kV, TO-247AC, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 240 A, 60 V, 0.0015 ohm, 10 V, 1 V

NEXPERIA

晶体管, MOSFET, P沟道, -130 mA, -50 V, 6 ohm, -10 V, -2 V

SEMELAB

晶体管, MOSFET, N沟道, 16 A, 160 V, 750 mohm, 1.5 V

ROHM

晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm

ROHM

双极晶体管阵列, 双路, NPN, PNP, 50 V, 150 mW, 150 mA, 120 hFE, EMT

INFINEON

晶体管, IGBT阵列&模块, N沟道, 65 A, 1.85 V, 225 W, 1.2 kV, Module

ROHM

晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 10 kohm

INFINEON

功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 67 A, 60 V, 0.009 ohm, 10 V, 4 V

IXYS SEMICONDUCTOR

单晶体管, IGBT, 58 A, 2.1 V, 250 W, 1.2 kV, TO-247AD, 3 引脚

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 44 A, 600 V, 130 mohm, 10 V, 4.5 V

IXYS SEMICONDUCTOR

Silicon Carbide IGBT Single Transistor, 60 A, 3 V, 220 W, 600 V, TO-247, 3 Pins

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 12 A, 60 V, 0.15 ohm, 10 V, 2.8 V