STMICROELECTRONICS

双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC

NEXPERIA

单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 100 mA, 110 hFE

NTE ELECTRONICS

双极性晶体管, PNP, -180V, TO-3

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.26 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 220 mA, 50 V, 0.7 ohm, 10 V, 1.3 V

ROHM

单晶体管 双极, NPN, 80 V, 320 MHz, 500 mW, 700 mA, 120 hFE

WOLFSPEED

单晶体管 双极, 6件, N沟道, 87 A, 1.2 kV, 0.025 ohm, 20 V, 2.3 V

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, 2 A, -20 V, 110 mohm, -4.5 V, -800 mV

INFINEON

晶体管, IGBT阵列&模块, N沟道, 25 A, 1.55 V, 71.5 W, 600 V, Module

INFINEON

单晶体管, IGBT, 15 A, 1.6 V, 105 W, 650 V, TO-220, 3 引脚

VISHAY

晶体管, MOSFET, N沟道, 16 A, 500 V, 0.28 ohm, 10 V, 5 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 27 A, 800 V, 320 mohm, 10 V, 4.5 V

DIODES INC.

晶体管, MOSFET, N沟道, 500 mA, 60 V, 5 ohm, 10 V, 2.1 V

NEXPERIA

晶体管, MOSFET, N沟道, 500 mA, 30 V, 117 mohm, 10 V, 2 V

SEMIKRON

晶体管, IGBT阵列&模块, 沟, N沟道, 830 A, 2 V, 1.7 kV, Module

VISHAY

晶体管, MOSFET, P沟道, -8.2 A, -60 V, 0.125 ohm, -10 V, -2 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, IGBT阵列&模块, NPN, 10 A, 1.5 V, 32 W, 600 V, SPM26-AAA

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 10 A, 650 V, 1 ohm, 10 V, 3 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 4.4 A, 525 V, 1.2 ohm, 10 V, 3.75 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.26 ohm, 10 V, 4 V

DIODES INC.

单晶体管 双极, NPN, 50 V, 215 MHz, 385 mW, 1 A, 450 hFE

ON SEMICONDUCTOR

单晶体管 双极, 通用, PNP, -40 V, 200 MHz, 225 mW, -600 mA, 30 hFE

NEXPERIA

单晶体管 双极, NPN, 60 V, 180 MHz, 500 mW, 1 A, 100 hFE

NEXPERIA

单晶体管 双极, 通用, NPN, 30 V, 100 MHz, 250 mW, 100 mA, 200 hFE