INFINEON

单晶体管, IGBT, N通道, 240 A, 1.7 V, 750 W, 600 V, TO-274AA, 3 引脚

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 8.5 A, 650 V, 0.39 ohm, 10 V, 4 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 10 A, 950 V, 0.68 ohm, 10 V, 4 V

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 225 mW, 500 mA, 160 hFE

SOLID STATE

单晶体管 双极, NPN, 100 V, 200 W, 20 A, 1000 hFE

NTE ELECTRONICS

双极性晶体管

ON SEMICONDUCTOR

双极晶体管阵列, 通用, 双NPN, 65 V, 380 mW, 100 mA, 200 hFE, SOT-363

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 500 mA, 2.2 kohm, 10 kohm, 0.22 电阻比率

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 78 A, 500 V, 0.068 ohm, 10 V, 5 V

MULTICOMP

单晶体管 双极, PNP, -80 V, 3 MHz, 30 W, -1 A, 40 hFE

NXP

RF WIDEBAND TRANSISTOR, PNP, -15V, 5GHZ,

POWEREX

晶体管, IGBT模块, 1600W, Vceo:600V, 400A, 600V

INFINEON

晶体管, IGBT阵列&模块, N沟道, 130 A, 3.2 V, 660 W, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 180 A, 3.2 V, 960 W, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 375 A, 1.95 V, 1.8 kW, 1.7 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 500 A, 1.45 V, 1.25 kW, 600 V, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 600 A, 1.95 V, 2.5 kW, 1.7 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 950 A, 1.95 V, 1.7 kV, Module

FUJI ELECTRIC

单晶体管, IGBT, 53 A, 1.8 V, 260 W, 1.2 kV, TO-247, 3 引脚

INFINEON

晶体管, IGBT阵列&模块, N沟道, 25 A, 1.7 V, 155 W, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 35 A, 1.85 V, 210 W, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 50 A, 1.85 V, 280 W, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 95 A, 1.45 V, 250 W, 600 V, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 105 A, 2.3 V, 350 W, 1.2 kV, EconoPIM

INFINEON

晶体管, IGBT阵列&模块, N沟道, 75 A, 1.7 V, 355 W, 1.2 kV, Module