SEMIKRON

单晶体管 双极, N沟道, 180 A, 200 V, 0.009 ohm, 10 V, 3 V

SEMIKRON

晶体管, IGBT阵列&模块, N沟道, 422 A, 1.85 V, 1.2 kV, Module

SEMIKRON

晶体管, IGBT阵列&模块, 双N沟道, 422 A, 1.85 V, 1.2 kV, Module

VISHAY

晶体管, MOSFET, N沟道, 1.6 A, 60 V, 0.1 ohm, 10 V, 2 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.84 ohm, 10 V, 3 V

ROHM

双路场效应管, MOSFET, 双N沟道, 1.5 A, 20 V, 0.13 ohm, 4.5 V, 1 V

ROHM

晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 10 kohm

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 1.7 A, 60 V, 0.073 ohm, 10 V, 2.4 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.35 ohm, 10 V, 3 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 60 A, 500 V, 50 mohm, 10 V, 4 V

SEMIKRON

晶体管, IGBT阵列&模块, NPN, 232 A, 1.8 V, 1.2 kV, Module

ROHM

晶体管 双极预偏置/数字, 数字式, 单路NPN, 50 V, 100 mA, 22 kohm, 47 kohm

ON SEMICONDUCTOR

单晶体管 双极, 通用, PNP, -60 V, 200 MHz, 150 mW, -600 mA, 50 hFE

ON SEMICONDUCTOR

双极性晶体管, PNP, -60V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, NPN 40V

INFINEON

晶体管, MOSFET, N沟道, 10 A, 55 V, 0.14 ohm, 10 V, 1 V

TEXAS INSTRUMENTS

双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.023 ohm, 10 V, 3 V

ROHM

晶体管 双极预偏置/数字, 数字式, 单路PNP, 50 V, -100 mA, 10 kohm, 47 kohm

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0031 ohm, 10 V, 1.5 V

INFINEON

晶体管, IGBT阵列&模块, N沟道, 100 A, 1.75 V, 555 W, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, 双NPN, 320 A, 1.75 V, 1.1 kW, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 105 A, 1.7 V, 355 W, 1.2 kV, Module

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 140 A, 100 V, 0.008 ohm, 10 V, 4 V

INFINEON

晶体管, IGBT阵列&模块, N沟道, 140 A, 1.7 V, 480 W, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 100 A, 1.7 V, 480 W, 1.2 kV, Module