INFINEON

晶体管, IGBT阵列&模块, N沟道, 150 A, 1.45 V, 430 W, 600 V, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 200 A, 1.7 V, 700 W, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 550 A, 1.95 V, 2.5 kW, 1.7 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 900 A, 1.75 V, 4.3 kW, 1.2 kV, Module

ROHM

晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 22 kohm, 22 kohm

INFINEON

晶体管, MOSFET, N沟道, 9.3 A, 200 V, 300 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 56 A, 75 V, 7.34 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 21 A, 150 V, 0.034 ohm, 10 V, 5 V

INFINEON

单晶体管, IGBT, N通道, 70 A, 1.7 V, 273 W, 650 V, TO-247AC, 3 引脚

INFINEON

晶体管, MOSFET, 汽车, N沟道, 200 A, 40 V, 3.1 mohm, 10 V, 2.7 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 20 A, 500 V, 0.3 ohm, 10 V, 5 V

ON SEMICONDUCTOR

预偏置数字式晶体管, 50V V(BR)CEO, 100mA I(C), SOT-363

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 48 A, 60 V, 25 mohm, 10 V, 2.9 V

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 4.7 kohm, 4.7 kohm

NEXPERIA

晶体管 双极预偏置/数字, 双路 PNP, -50 V, -100 mA, 4.7 kohm, 47 kohm, 10 电阻比率

ROHM

晶体管, MOSFET, N沟道, 17.5 A, 100 V, 0.075 ohm, 10 V, 2.5 V

SEMIKRON

晶体管, IGBT阵列&模块, 双N沟道, 313 A, 1.8 V, 1.2 kV, Module

SEMIKRON

晶体管, IGBT阵列&模块, 双N沟道, 80 A, 2 V, 1.7 kV, Module

NEXPERIA

单晶体管 双极, PNP, -80 V, 145 MHz, 650 mW, -1 A, 100 hFE

SOLID STATE

晶体管, MOSFET, MOSPOWER, N沟道, 900 mA, 90 V, 3 ohm, 10 V, 1.5 V

NEXPERIA

单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 500 mA, 100 hFE

ROHM

功率场效应管, MOSFET, N沟道, 76 A, 600 V, 0.038 ohm, 10 V, 4 V

NEXPERIA

单晶体管 双极, 通用, PNP, -45 V, 100 MHz, 250 mW, -100 mA, 420 hFE

ON SEMICONDUCTOR

单晶体管 双极, 通用, PNP, -45 V, 100 MHz, 225 mW, -500 mA, 160 hFE

ON SEMICONDUCTOR

双极性晶体管, NPN, 140V, SOT-323, 整卷