SOLID STATE

晶体管, JFET, JFET, -40 V, 8 mA, 80 mA, -4 V, TO-18, JFET

NEXPERIA

单晶体管 双极, PNP, -45 V, 200 mW, -100 mA, 220 hFE

MULTICOMP

单晶体管 双极, PNP, -45 V, 200 MHz, 330 mW, -1 A, 350 hFE

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 3.9 A, 600 V, 1 ohm, 10 V, 5 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 20 A, 500 V, 230 mohm, 10 V, 5 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, 6 A, -20 V, 50 mohm, -4.5 V, -600 mV

INFINEON

晶体管, IGBT阵列&模块, N沟道, 225 A, 1.7 V, 780 W, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 55 A, 1.8 V, 210 W, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 100 A, 1.75 V, 515 W, 1.2 kV, Module

INFINEON

单晶体管, IGBT, IRG4, 8.5 A, 600 V, 38 W, 600 V, TO-220AB, 3 引脚

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 150 mW, 600 mA, 35 hFE

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 25 V, 300 MHz, 225 mW, 200 mA, 60 hFE

VISHAY

场效应管, MOSFET, N沟道, 30V, 12A

VISHAY

晶体管, MOSFET, N沟道, 15 A, 60 V, 0.006 ohm, 10 V, 3 V

VISHAY

晶体管, MOSFET, N沟道, 30 A, 40 V, 8.5 mohm, 10 V, 1.2 V

SEMIKRON

晶体管, IGBT阵列&模块, 双N沟道, 195 A, 1.45 V, 600 V, Module

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 3.8 A, 620 V, 1.7 ohm, 10 V, 3.75 V

SEMIKRON

晶体管, IGBT阵列&模块, 双N沟道, 100 A, 3.3 V, 1.2 kV, Module

ON SEMICONDUCTOR

晶体管, MOSFET, P沟道, -3.2 A, -20 V, 0.07 ohm, -4.5 V, -720 mV

NEXPERIA

场效应管, MOSFET, N沟道, 30V, 1.9A, 3-SOT-23, 整卷

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -1.6 A, -20 V, 0.088 ohm, -4.5 V, -800 mV

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 22 kohm, 22 kohm

STMICROELECTRONICS

单晶体管, IGBT, 11 A, 2.5 V, 28 W, 600 V, TO-220FP, 3 引脚

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm