
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.7 A, 620 V, 2.2 ohm, 10 V, 3.75 V

NEXPERIA
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 200 mW, 100 mA, 420 hFE

ON SEMICONDUCTOR
单晶体管 双极, PNP, -350 V, 35 MHz, 230 W, -15 A, 10 hFE

ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -60 V, 200 MHz, 300 mW, -600 mA, 50 hFE

INFINEON
晶体管, IGBT阵列&模块, N沟道, 225 A, 1.7 V, 780 W, 1.2 kV, Module

INFINEON
晶体管, IGBT阵列&模块, N沟道, 55 A, 1.8 V, 210 W, 1.2 kV, Module

INFINEON
晶体管, IGBT阵列&模块, N沟道, 105 A, 1.7 V, 20 mW, 1.2 kV, Module

IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 210 A, 300 V, 0.0145 ohm, 10 V, 5 V

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -6.9 A, -30 V, 0.018 ohm, -10 V, -1.9 V

ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -80 V, 50 MHz, 225 mW, -500 mA, 100 hFE

NEXPERIA
单晶体管 双极, 达林顿, NPN, 60 V, 220 MHz, 250 mW, 500 mA, 10000 hFE

IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 140 A, 200 V, 18 mohm, 10 V, 5 V

ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率

NEXPERIA
单晶体管 双极, 通用, PNP, -45 V, 100 MHz, 250 mW, -100 mA, 125 hFE