NEXPERIA

晶体管, MOSFET, N沟道, 850 mA, 30 V, 0.4 ohm, 4.5 V, 400 mV

MULTICOMP

场效应管, MOSFET, 双路N沟道, 60V, 4.4Ω, 115mA, SOT-363-6

NEXPERIA

双极性晶体管, PNP, -65V, -100MA, 3-SOT-323, 整卷

MULTICOMP

场效应管, MOSFET, N沟道, 60V, 1.2Ω, 115mA, SOT-23

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 65 V, 100 MHz, 300 mW, 100 mA, 110 hFE

INFINEON

单晶体管, IGBT, 52 A, 1.84 V, 104 W, 600 V, TO-247AC, 3 引脚

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 15 A, 1 kV, 700 mohm, 10 V, 4.5 V

NEXPERIA

晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 4.7 kohm, 47 kohm

ON SEMICONDUCTOR

晶体管 双极-射频, PNP, -45 V, 100 MHz, 300 mW, -500 mA, 250 hFE

ON SEMICONDUCTOR

单晶体管 双极, PNP, -40 V, 250 MHz, 200 mW, -200 mA, 30 hFE

MULTICOMP

单晶体管 双极, PNP, -70 V, 10 MHz, 40 W, -7 A, 150 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 6.3 A, 30 V, 0.021 ohm, 10 V, 1.9 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -32 A, -40 V, 0.023 ohm, -10 V, -1.6 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道+P沟道, 30V, SOIC, 整卷

VISHAY

场效应管, N通道, MOSFET, 整卷

VISHAY

场效应管, P通道, MOSFET, -60V, 19A, TO-252, 整卷

NEXPERIA

单晶体管 双极, PNP, -30 V, 100 MHz, 250 mW, -100 mA, 220 hFE

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 4.7 kohm, 10 kohm, 0.47 电阻比率

NEXPERIA

晶体管 双极预偏置/数字, BRT, 双路 NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, P沟道, -25V, 460mA, SOT-23, 整卷

VISHAY

场效应管, MOSFET, N通道, 20V, 0.045Ω, 2.6A

VISHAY

晶体管, MOSFET, N沟道, 2.6 A, 20 V, 0.045 ohm, 4.5 V, 850 mV

VISHAY

晶体管, MOSFET, N沟道, 6 A, 8 V, 0.014 ohm, 4.5 V, 800 mV

VISHAY

晶体管, MOSFET, N沟道, 36 A, 40 V, 0.0027 ohm, 10 V, 2.5 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, P沟道, -20V, 6A, SOT-223, 整卷