VISHAY

场效应管, MOSFET, P沟道, -60V, 11A, TO-263, 整卷

TEXAS INSTRUMENTS

达林顿晶体管阵列, NPN, 0.35A, SOIC-16, 整卷

SOLID STATE

晶体管, JFET, JFET, -40 V, 50 mA, -10 V, TO-18, JFET

DIODES INC.

单晶体管 双极, PNP, -45 V, 100 MHz, 200 mW, -100 mA, 220 hFE

ON SEMICONDUCTOR

单晶体管 双极, PNP, -30 V, 100 MHz, 225 mW, -100 mA, 90 hFE

ON SEMICONDUCTOR

单晶体管 双极, NPN, 45 V, 225 mW, 500 mA, 40 hFE

NEXPERIA

单晶体管 双极, NPN, 60 V, 180 MHz, 500 mW, 1 A, 63 hFE

STMICROELECTRONICS

单晶体管 双极, NPN, 400 V, 70 W, 3 A, 10 hFE

POWEREX

晶体管, IGBT模块, N沟道, 1.2KV, 450A

TEXAS INSTRUMENTS

电源模块, NEXFET对, 同步降压, 25V, 65A, SON-8

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双N沟道, 2.7 A, 20 V, 80 mohm, 4.5 V, 900 mV

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -5.3 A, -30 V, 50 mohm, -10 V, -1.7 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双N沟道, 6.5 A, 20 V, 25 mohm, 4.5 V, 1 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 900 mA, 20 V, 220 mohm, 4.5 V, 1 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 20V, 900mA, SOT-23, 整卷

INFINEON

晶体管, IGBT阵列&模块, N沟道, 50 A, 1.85 V, 285 W, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 100 A, 1.75 V, 515 W, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 25 A, 1.7 V, 105 W, 1.2 kV, Module

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, 47 A, -60 V, 26 mohm, -10 V, -4 V

INFINEON

晶体管, IGBT阵列&模块, N沟道, 700 A, 1.3 V, 1.55 kW, 650 V, Module

ON SEMICONDUCTOR/FAIRCHILD

晶体管, IGBT, 600V, 14A

INFINEON

单晶体管, IGBT, 10 A, 2.05 V, 110 W, 600 V, TO-263, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 3.7 A, 200 V, 79 mohm, 10 V, 2.5 V

INFINEON

晶体管, MOSFET, N沟道, 16 A, 60 V, 0.0056 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 3.6 A, 500 V, 1.85 ohm, 10 V, 3 V