
DIODES INC.
双路场效应管, MOSFET, 增强模式, N和P沟道, 3.1 A, 30 V, 0.12 ohm, 10 V, -1 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 3 A, -60 V, 0.082 ohm, -10 V, -1.6 V

MULTICOMP
双极晶体管

ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -80 V, 50 MHz, 1.5 W, -1.5 A, 100 hFE

WOLFSPEED
单晶体管 双极, 双N沟道, 193 A, 1.2 kV, 0.013 ohm, 20 V, 2.6 V

INFINEON
晶体管, IGBT阵列&模块, N沟道, 75 A, 1.7 V, 280 W, 1.2 kV, Module

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 950 V, 0.69 ohm, 10 V, 3.75 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 4 V

VISHAY
晶体管, MOSFET, N沟道, 21.4 A, 60 V, 0.025 ohm, 10 V, 3 V

ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 30 V, 250 MHz, 225 mW, 600 mA, 35 hFE

ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 30 V, 100 MHz, 300 mW, 100 mA, 420 hFE

ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, -1.3A, SuperSOT, 整卷