ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 1.7 A, 100 V, 275 mohm, 10 V, 2 V

GENESIC SEMICONDUCTOR

碳化硅结晶体管, 1.2KV, 5A, TO-263

INFINEON

功率场效应管, MOSFET, N沟道, 15 A, 900 V, 0.28 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 10 A, 40 V, 0.009 ohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, N沟道, 3.7 A, 55 V, 45 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 190 A, 100 V, 3.3 mohm, 20 V, 4 V

INFINEON

场效应管, MOSFET, N沟道, 150V, 86A, TO-263-7

INFINEON

晶体管, MOSFET, N沟道, 3.4 A, 30 V, 0.046 ohm, 4.5 V, 800 mV

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, X2-Class, N沟道, 102 A, 650 V, 0.03 ohm, 10 V, 5 V

ON SEMICONDUCTOR/FAIRCHILD

双极性晶体管, NPN, 100V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 15 V, 300 mW, 200 mA, 40 hFE

ON SEMICONDUCTOR

单晶体管 双极, NPN, 30 V, 100 MHz, 310 mW, 1 A, 300 hFE

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 45 V, 700 MHz, 225 mW, 200 mA, 500 hFE

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率

NXP

射频场效应管, MOSFET, N通道, 68V, 466-03, 整卷

NEXPERIA

单晶体管 双极, PNP, -30 V, 160 MHz, 390 mW, -2.4 A, 320 hFE

NEXPERIA

单晶体管 双极, PNP, -100 V, 100 MHz, 550 mW, -1 A, 150 hFE

NEXPERIA

开关晶体管, NPN, 15V, 200MA, 3-SOT-23, 整卷

NEXPERIA

开关晶体管, PNP, -40V, -200MA, 3-SOT-23, 整卷

NEXPERIA

晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 47 kohm, 47 kohm

VISHAY

晶体管, MOSFET, 沟槽式FET, P沟道, -10 A, -20 V, 0.007 ohm, -4.5 V, -800 mV

VISHAY

场效应管, P通道, MOSFET, 整卷

VISHAY

晶体管, MOSFET, P沟道, -2.2 A, -200 V, 145 mohm, -10 V, -4 V

SEMIKRON

晶体管, IGBT阵列&模块, 双N沟道, 420 A, 1.85 V, 1.2 kV, Module

SEMIKRON

晶体管模块, IGBT, 800mV, 618A, SEMITRANS3