STMICROELECTRONICS

晶体管, MOSFET, N沟道, 17 A, 500 V, 0.162 ohm, 10 V, 3 V

STMICROELECTRONICS

Power MOSFET, Mdmesh DM2, N Channel, 12 A, 600 V, 0.26 ohm, 10 V, 3 V

VISHAY

场效应管, MOSFET, P通道, -60V, 0.015Ω, -55A

TEXAS INSTRUMENTS

双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, TSSOP

TEXAS INSTRUMENTS

达林顿晶体管阵列, NPN, 7, 50V TSSOP, 整卷

VISHAY

晶体管, IGBT阵列&模块, NPN, 131 A, 3.3 V, 658 W, 1.2 kV, SOT-227

ROHM

晶体管 双极预偏置/数字, 数字式, 单路NPN, 50 V, 500 mA, 1 kohm, 1 kohm

NEXPERIA

晶体管 双极预偏置/数字, 单路PNP, -40 V, -800 mA, 1 kohm, 10 kohm

NXP

场效应管, MOSFET阵列, N与P沟道, 300V, 340MA, 8-SOIC

INFINEON

晶体管, IGBT阵列&模块, N沟道, 150 A, 1.75 V, 790 W, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 840 A, 2 V, 3.15 kW, 1.7 kV, Module

IXYS SEMICONDUCTOR

单晶体管 双极, N沟道, 112 A, 500 V, 0.039 ohm, 10 V, 5 V

VISHAY

场效应管, MOSFET, P沟道, -60V, 50A, TO-252

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率

ON SEMICONDUCTOR

达林顿晶体管, NPN, 100V, D-PAK, 整卷

SEMIKRON

晶体管, IGBT阵列&模块, 双N沟道, 160 A, 1.8 V, 1.2 kV, Module

NEXPERIA

单晶体管 双极, 通用, NPN, 65 V, 100 MHz, 250 mW, 100 mA, 110 hFE

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, NPN, 100 V, 4 MHz, 20 W, 8 A, 1000 hFE

NEXPERIA

单晶体管 双极, NPN, 300 V, 60 MHz, 250 mW, 50 mA, 50 hFE

MULTICOMP

场效应管, MOSFET, P沟道, -50V, 1.2Ω, -130mA, SOT-23-3

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 10 kohm

MICRO COMMERCIAL COMPONENTS

场效应管, MOSFET, N沟道, 60V, 115mA, SOT-23, 整卷

NEXPERIA

单晶体管 双极, NPN, 45 V, 100 MHz, 200 mW, 100 mA, 110 hFE

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双N沟道, 3 A, 20 V, 0.05 ohm, 4.5 V, 900 mV

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, 双N沟道, POWERTRENCH, 30V, 30A, POWER56, 整卷