ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, P沟道, -60V, -120mA, SOT-23, 整卷

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 1.3 A, 20 V, 0.11 ohm, 4.5 V, 700 mV

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 60V, 4A, SOT-223, 整卷

ON SEMICONDUCTOR

双极性晶体管, PNP, -12V, SOT-563, 整卷

NEXPERIA

单晶体管 双极, NPN, 20 V, 100 MHz, 300 mW, 1 A, 280 hFE

NEXPERIA

单晶体管 双极, NPN, 40 V, 150 MHz, 250 mW, 1 A, 200 hFE

NEXPERIA

单晶体管 双极, PNP, -50 V, 100 MHz, 300 mW, 3 A, 200 hFE

NEXPERIA

单晶体管 双极, PNP, -80 V, 125 MHz, 550 mW, -4 A, 300 hFE

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 2.2 kohm, 47 kohm

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 10 kohm

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率

NEXPERIA

双极性晶体管, 高压, PNP, -300V, -100MA, 3SOT, 整卷

NEXPERIA

单晶体管 双极, NPN, 40 V, 150 MHz, 250 mW, 1 A, 300 hFE

NEXPERIA

单晶体管 双极, 开关, PNP, -40 V, 250 MHz, 200 mW, -200 mA, 100 hFE

ROHM

晶体管, MOSFET, P沟道, -100 mA, -20 V, 2.5 ohm, -4.5 V, -1 V

VISHAY

场效应管, MOSFET, P沟道, -12V, 4.1A TO-236, 整卷

VISHAY

场效应管, MOSFET, P通道, -30V, 0.01Ω, -8.8A

VISHAY

场效应管, P通道, MOSFET, -30V, -8.1A, SOIC-8, 整卷

VISHAY

场效应管, MOSFET, P沟道, -20V, -60A, POWERPAK SO-8, 整卷

SEMIKRON

单晶体管 双极, 增强模式, N沟道, 80 A, 100 V, 0.0075 ohm, 10 V, 3.3 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, N沟道, 6.5 A, 100 V, 0.16 ohm, 10 V

MULTICOMP

单晶体管 双极, 达林顿, NPN, 100 V, 80 W, 8 A, 200 hFE

TEXAS INSTRUMENTS

双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC

VISHAY

场效应管, MOSFET, P沟道, -30V, 2.7A TO-236, 整卷