
NEXPERIA
单晶体管 双极, AEC-Q101, PNP, -30 V, 170 MHz, 325 mW, -1 A, 130 hFE

ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 10 kohm

VISHAY
双路场效应管, MOSFET, 双N沟道, 7.1 A, 30 V, 0.156 ohm, 10 V, 1 V

NEXPERIA
单晶体管 双极, NPN, PNP, -60 V, 150 MHz, 480 mW, -1.5 A, 285 hFE

ON SEMICONDUCTOR
单晶体管 双极, NPN, 20 V, 350 MHz, 255 mW, 1 A, 100 hFE

ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 300 mA, 60 V, 0.7 ohm, 10 V, 2.5 V

ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.5 A, -12 V, 0.054 ohm, -4.5 V, -1.4 V

ROHM
晶体管 双极预偏置/数字, 单路PNP, -50 V, -500 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率

ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 120V, 0.0096OHM, 35A, POWER 56-8

INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0025 ohm, 10 V, 1.8 V

ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2 A, -12 V, 0.152 ohm, -4.5 V, -900 mV

ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 0.205 ohm, -4.5 V, -1.4 V