VISHAY

晶体管, MOSFET, N沟道, 16 A, 20 V, 0.026 ohm, 4.5 V, 400 mV

ROHM

晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 1 kohm, 10 kohm, 0.1 电阻比率

NEXPERIA

晶体管, MOSFET, 沟槽式, P沟道, -3.7 A, -20 V, 0.05 ohm, -4.5 V, -650 mV

VISHAY

晶体管, MOSFET, N沟道, 60 A, 80 V, 0.0063 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 10 A, 650 V, 0.204 ohm, 10 V, 3.5 V

VISHAY

晶体管, P沟道

NEXPERIA

双路场效应管, MOSFET, AEC-Q101, 双PNP

INFINEON

功率场效应管, MOSFET, N沟道, 11.1 A, 600 V, 0.27 ohm, 10 V, 3 V

INFINEON

场效应管, MOSFET, N沟道 通道, 25V, 60A, PQFN-30

VISHAY

晶体管, P沟道

VISHAY

晶体管, MOSFET, N沟道, 11.7 A, 30 V, 0.0062 ohm, 10 V, 1 V

VISHAY

场效应管, MOSFET, P沟道, -4.1A, -12V, 750mW

NXP

晶体管, BISS, NPN, 60V, 3A, 6-SOT-457

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 49 A, 25 V, 0.00095 ohm, 10 V, 1.6 V

INFINEON

场效应管, MOSFET

NEXPERIA

双极性晶体管阵列, 双路NPN, 45V, 500mA, 6-SOT-457

INFINEON

场效应管, MOSFET, N沟道, 100A, 60V, 3.6W

ON SEMICONDUCTOR

单晶体管 双极, NPN, 25 V, 650 MHz, 300 mW, 60 hFE

ON SEMICONDUCTOR/FAIRCHILD

双极性晶体管, PNP, -100V

VISHAY

MOSFET, P CHANNEL, -30V, -40A, POWERPAK SO-8

INFINEON

晶体管 双极-射频, NPN, 2.25 V, 85 GHz, 75 mW, 35 mA, 150 hFE

ON SEMICONDUCTOR

双路场效应管, MOSFET, 双N沟道, 9.6 A, 30 V, 0.014 ohm, 4.5 V, 1.2 V

VISHAY

MOSFET, P CHANNEL, -8V, -12A, POWERPAK SC70-6

NEXPERIA

单晶体管 双极, NPN, PNP, 30 V, 165 MHz, 2 W, 1 A, 180 hFE

VISHAY

晶体管, MOSFET, P沟道, 5.6 A, -8 V, 42 mohm, -4.5 V, -1 V