ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, P沟道, -30V, 6.8A, MICROFET 2X2

INFINEON

晶体管 双极-射频, NPN, 4.2 V, 47 GHz, 160 mW, 45 mA, 160 hFE

ON SEMICONDUCTOR

双路场效应管, MOSFET, 双N沟道, 6 A, 35 V, 0.03 ohm, 10 V

INFINEON

功率场效应管, MOSFET, N沟道, 16.1 A, 650 V, 0.23 ohm, 10 V, 3 V

ON SEMICONDUCTOR

双路场效应管, MOSFET, 双P沟道, -3.05 A, -30 V, 0.063 ohm, -10 V, -1.7 V

TEXAS INSTRUMENTS

双路场效应管, MOSFET, 双N沟道, 45 A, 30 V, 0.0039 ohm, 4.5 V, 1.9 V

INFINEON

晶体管, MOSFET, N沟道, 5.1 A, 55 V, 0.0462 ohm, 10 V, 4 V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 100 V, 20 W, 8 A, 300 hFE

VISHAY

场效应管, MOSFET, N沟道, 30V, 3.2A, TO-236

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, P沟道, -20V, 3.1A, MICROFET 2X2

VISHAY

MOSFET, N CHANNEL, 30V, 0.0058OHM, 40A, POWERPAK SO-8

VISHAY

场效应管, N通道, MOSFET, 100V, 14A, D2-PAK

ON SEMICONDUCTOR

单晶体管, IGBT, 16 A, 1.65 V, 56 W, 600 V, TO-252, 3 引脚

VISHAY

晶体管, MOSFET, P沟道, -2.7 A, -12 V, 0.07 ohm, -1.8 V, -450 mV

MICRO COMMERCIAL COMPONENTS

双极性晶体管, PNP, 150VDC, SOT-23

VISHAY

晶体管, MOSFET, N沟道, 960 mA, 200 V, 1.5 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, P沟道, -20V, 0.026Ω, 5.8A, SUPERSOT-6

VISHAY

Transistor Polarity:P Channel

INFINEON

晶体管 双极-射频, NPN, 4.5 V, 30 GHz, 250 mW, 80 mA, 50 hFE

ON SEMICONDUCTOR

单晶体管, IGBT, 9 A, 1.7 V, 49 W, 600 V, TO-252, 3 引脚

VISHAY

MOSFET, P CHANNEL, -20V, -25A, POWERPAK-8

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 2 ohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, N沟道, 960 mA, 200 V, 1.5 ohm, 10 V, 4 V

VISHAY

晶体管, P沟道

INFINEON

晶体管, MOSFET, N沟道, 190 A, 100 V, 0.0032 ohm, 10 V, 1 V