VISHAY

双路场效应管, MOSFET, 双N沟道, 3.1 A, 30 V, 0.044 ohm, 10 V, 1 V

VISHAY

场效应管, MOSFET, N沟道, 10A, 30V, 2.5W

INTERNATIONAL RECTIFIER

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.98 ohm, 10 V, 3 V

NXP

射频宽带晶体管, NPN, 4.5V, 17GHZ, 4-SOT-343R

ON SEMICONDUCTOR/FAIRCHILD

TRANSISTOR, NPN, DUAL, 45V, 200mA, SC-70

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.095 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, N和P沟道, 5.5 A, 30 V, 0.025 ohm, 4.5 V, 670 mV

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V

RENESAS

晶体管, MOSFET, N沟道, 25 A, 100 V, 11 mohm, 10 V

INFINEON

场效应管, MOSFET, N沟道, 8.3A, 100V SOIC-8

VISHAY

MOSFET, DUAL P CHANNEL, -12V, -4.5A, POWERPAK SC70-6

ROHM

晶体管 双极预偏置/数字, AEC-Q101, 单路PNP, -50 V, -100 mA, 10 kohm, 10 kohm, 1 电阻比率

VISHAY

N CHANNEL MOSFET, 20V, 200mA, SC-89

ON SEMICONDUCTOR/FAIRCHILD

MOSFET, N CHANNEL, 20V, 0.019OHM, 7A, MICROFET-6

INFINEON

单晶体管, IGBT, N通道, 12 A, 1.7 V, 77 W, 600 V, TO-252AA, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 25 A, 55 V, 0.03 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 65 A, 30 V, 0.0063 ohm, 10 V, 1.9 V

INFINEON

晶体管, MOSFET, N沟道, 31 A, 100 V, 0.034 ohm, 10 V, 4 V

NEXPERIA

单晶体管 双极, 双PNP, -60 V, 125 MHz, 2 W, -1 A, 70 hFE

VISHAY

晶体管, MOSFET, P沟道, -10.5 A, -30 V, 0.0063 ohm, -10 V, -1 V

NEXPERIA

达林顿晶体管, NPN, 45V, 1A, 3-SOT-89

ON SEMICONDUCTOR

场效应管, MOSFET, N沟道, 20V, 5.1A, TSOP

ON SEMICONDUCTOR

小信号预偏晶体管

INFINEON

场效应管, MOSFET, P沟道, -700mA, -150V, 8-SOIC