VISHAY

场效应管, MOSFET, N沟道+P沟道, 12V, 4.5A, POWERPAK SC-70

VISHAY

晶体管, MOSFET, P沟道, -9.9 A, -50 V, 0.2 ohm, -10 V, -4 V

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 600V, 23A

TEXAS INSTRUMENTS

场效应管, MOSFET, N沟道, 25V, 100A, 0.0009Ω, SON-8

VISHAY

晶体管, MOSFET, N沟道, 16 A, 8 V, 0.019 ohm, 4.5 V, 350 mV

VISHAY

双路场效应管, MOSFET, 双N沟道, 8 A, 60 V, 0.03 ohm, 10 V, 2 V

VISHAY

双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.0059 ohm, 10 V, 1.2 V

TEXAS INSTRUMENTS

双路场效应管, MOSFET, 双N沟道, 7 A, 20 V, 0.024 ohm, 4.5 V, 900 mV

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 2.2 kohm, 47 kohm

INFINEON

晶体管, MOSFET, N沟道, 21 A, 60 V, 0.0035 ohm, 10 V, 4 V

VISHAY

MOSFET, P CHANNEL, -200V, -1.9A, TO-252-3

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, 双N沟道, SuperSOT-6

VISHAY

场效应管, MOSFET, N沟道, 75V, 16A POWERPAK

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0038 ohm, 8 V, 850 mV

ON SEMICONDUCTOR

达林顿晶体管, PNP, -60V, TO-225

VISHAY

MOSFET, N CHANNEL, 200V, 960mA, SOT-223-4

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0063 ohm, 10 V, 1.6 V

NEXPERIA

单晶体管 双极, PNP, -50 V, 200 MHz, 250 mW, -200 mA, 210 hFE

ON SEMICONDUCTOR/FAIRCHILD

MOSFET, N CHANNEL, 30V, 0.0029OHM, 42A, POWER 56-8

INTERNATIONAL RECTIFIER

场效应管, 双MOSFET, 双P沟道

VISHAY

晶体管, MOSFET, N沟道, 60 A, 20 V, 0.0015 ohm, 10 V, 2.3 V

ON SEMICONDUCTOR/FAIRCHILD

MOSFET, P CHANNEL, -30V, 0.105OHM, -3.4A, SOIC-8

NEXPERIA

晶体管, MOSFET, N沟道, 89 A, 80 V, 0.0073 ohm, 10 V, 3 V

VISHAY

功率场效应管, MOSFET, N沟道, 7 A, 600 V, 0.5 ohm, 10 V, 2 V

NEXPERIA

晶体管, MOSFET, 沟槽式, P沟道, -5.2 A, -20 V, 0.03 ohm, -4.5 V, -680 mV