产品分类：晶体管,
NEXPERIA
晶体管 双极预偏置/数字, AEC-Q101, 单路PNP, -50 V, -100 mA, 10 kohm, 47 kohm, 0.21 电阻比率
(EN)
ON SEMICONDUCTOR
射频双极晶体管
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2.2 A, 600 V, 4 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.133 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 150 A, 40 V, 0.0016 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
单晶体管, IGBT, 20 A, 1.55 V, 115 W, 650 V, TO-263, 3 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 55 A, 30 V, 0.0014 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 13 A, 100 V, 62 mohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 11.6 A, 560 V, 0.34 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 140 A, 40 V, 0.0019 ohm, 10 V, 4 V
(EN)NEXPERIA
单晶体管 双极, AEC-Q101, NPN, 45 V, 100 MHz, 280 mW, 100 mA, 420 hFE
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.104 ohm, 10 V, 2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道 + 肖特基, 16 A, 30 V, 0.0075 ohm, 10 V, 1.1 V
(EN)
ON SEMICONDUCTOR
射频双极晶体管
(EN)
