INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 150V, 27A, TO-220AB

INFINEON

晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0048 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 80 A, 60 V, 0.0061 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0033 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 240 A, 40 V, 0.001 ohm, 10 V, 2.5 V

NEXPERIA

单晶体管 双极, PNP, -20 V, 80 MHz, 1.1 W, -4 A, 400 hFE

INFINEON

晶体管, MOSFET, N沟道, 240 A, 60 V, 0.0015 ohm, 10 V, 2.5 V

ON SEMICONDUCTOR/FAIRCHILD

MOSFET, N CHANNEL, 500V, 0.65OHM, 9A, TO-263-3

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 240 A, 80 V, 0.0016 ohm, 10 V, 2.9 V

INFINEON

MOSFET, N-CH, 75V, 197A, TO-263CB-7

INTERNATIONAL RECTIFIER

场效应管, MOSFET, N沟道, 100V, 10A, D-PAK

INFINEON

晶体管, MOSFET, N沟道, 195 A, 60 V, 0.002 ohm, 10 V, 4 V

VISHAY

MOSFET, N CHANNEL, 80V, 40A, TO-252-3

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 124 A, 40 V, 0.0028 ohm, 10 V, 1.8 V

VISHAY

MOSFET, N CHANNEL, 600V, 12A, TO-220-3

VISHAY

场效应管, MOSFET, P沟道, -40V, 18.6A, SOIC

ON SEMICONDUCTOR

RF TRANSISTOR, NPN, 30V, 100MHZ, SOT-323

INFINEON

晶体管, MOSFET, N沟道, 53 A, 55 V, 0.0165 ohm, 10 V, 4 V

VISHAY

双路场效应管, MOSFET, N和P沟道, 4.5 A, 12 V, 0.033 ohm, 4.5 V, 400 mV

NEXPERIA

晶体管, MOSFET, N沟道, 33 A, 40 V, 0.0178 ohm, 10 V, 3 V

INFINEON

场效应管, MOSFET, N沟道, 40V, 120A, TO-220AB-3

NEXPERIA

晶体管 双极预偏置/数字, AEC-Q101, 双路 NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率

NEXPERIA

单晶体管 双极, PNP, -60 V, 110 MHz, 1.35 W, -6 A, 20 hFE

VISHAY

场效应管, MOSFET, N沟道, 600V, 12A, TO-263-3

NXP

射频宽带晶体管, NPN, 5V, 5GHZ, 3-SOT-23