INFINEON

场效应管阵列, MOSFET, 双P沟道, -30V, -2.3A, 6-PQFN

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 270 A, 80 V, 0.0013 ohm, 10 V, 2.9 V

ROHM

晶体管 双极预偏置/数字, PNP, 双路 PNP, -50 V, -100 mA, 10 kohm

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 40 A, 55 V, 6.5 mohm, 10 V, 3 V

NXP

双极性晶体管, 中功率, PNP, -45V, -1A, 4-SOT-223

TEXAS INSTRUMENTS

场效应管, MOSFET, N沟道, 40V, 100A, 0.0018Ω, SON-8

INFINEON

晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0055 ohm, 10 V, 2.8 V

VISHAY

功率场效应管, MOSFET, N沟道, 1.8 A, 800 V, 6.5 ohm, 10 V, 4 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.27 ohm, 10 V, 4 V

INFINEON

场效应管, MOSFET

VISHAY

Transistor Polarity:N Channel

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 117 A, 30 V, 0.0022 ohm, 10 V, 1.5 V

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 60V, 48A TO-220AB

NEXPERIA

晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率

STMICROELECTRONICS

单晶体管, IGBT, 120 A, 1.85 V, 469 W, 600 V, TO-247, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 49 A, 55 V, 0.0175 ohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, N沟道, 8.7 A, 100 V, 0.15 ohm, 10 V, 2 V

VISHAY

晶体管, MOSFET, N沟道, 15 A, 30 V, 0.009 ohm, 10 V, 2 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 16 A, 600 V, 0.2 ohm, 10 V, 3 V

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 47 kohm

TAIWAN SEMICONDUCTOR

晶体管, MOSFET, N沟道, 4 A, 20 V, 0.024 ohm, 4.5 V, 800 mV

NXP

双极性晶体管, 中等功率, PNP, -45V, -1A, 3SOT89

ON SEMICONDUCTOR

双极晶体管

STMICROELECTRONICS

单晶体管, IGBT, 60 A, 1.55 V, 258 W, 650 V, TO-247, 3 引脚

ON SEMICONDUCTOR

双极晶体管