NEXPERIA

单晶体管 双极, NPN, 20 V, 170 MHz, 420 mW, 2 A, 40 hFE

ON SEMICONDUCTOR

双极性晶体管, PNP -60V TO-220

NEXPERIA

单晶体管 双极, NPN, 60 V, 180 MHz, 420 mW, 1 A, 63 hFE

VISHAY

晶体管, MOSFET, N沟道, 22 A, 500 V, 0.185 ohm, 10 V, 3 V

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 30V, 11A, SOIC

NEXPERIA

晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00153 ohm, 10 V, 1.8 V

NEXPERIA

单晶体管 双极, NPN, 60 V, 180 MHz, 420 mW, 1 A, 100 hFE

NEXPERIA

双极晶体管阵列, 双NPN, 20 V, 510 mW, 2 A, 150 hFE, SOT-1118

VISHAY

晶体管, MOSFET, P沟道, -6.5 A, -200 V, 0.8 ohm, -10 V, -2 V

DIODES INC.

单晶体管 双极, 高增益, NPN, 12 V, 260 MHz, 350 mW, 5 A, 800 hFE

INFINEON

场效应管, MOSFET

VISHAY

场效应管, MOSFET, N沟道, 36W, TO-220AB

VISHAY

场效应管, MOSFET, N沟道

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 场截止沟道, 150 A, 1.6 V, 455 W, 650 V, TO-247, 4 引脚

VISHAY

晶体管, MOSFET, P沟道, -16.3 A, -100 V, 0.115 ohm, -10 V

VISHAY

场效应管, MOSFET, N沟道, 650V, 24A, TO-247AC-3

FUJI ELECTRIC

功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.059 ohm, 10 V, 3 V

VISHAY

晶体管, MOSFET, N沟道, 35 A, 60 V, 28 mohm, 10 V

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 1.2KV, 45A

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, N通道, 80 A, 2.3 V, 428 W, 1.2 kV, TO-247, 3 引脚

INTERNATIONAL RECTIFIER

场效应管, MOSFET, N沟道, 车用, 55V, 49A, TO-220AB

INFINEON

单晶体管, IGBT, 40 A, 1.6 V, 255 W, 650 V, TO-220, 3 引脚

NEXPERIA

双极晶体管阵列, 双PNP, -60 V, 510 mW, -2 A, 50 hFE, SOT-1118

NEXPERIA

晶体管 双极预偏置/数字, AEC-Q101, 单路PNP, -50 V, -500 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率

NEXPERIA

双极性晶体管, MED POWER, NPN, 60V, 1A