TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 212 A, 80 V, 0.0026 ohm, 10 V, 2.6 V

VISHAY

场效应管, MOSFET, N沟道

VISHAY

MOSFET, P CHANNEL, -50V, -9.9A, TO-252-3

ON SEMICONDUCTOR

场效应管, JFET, N沟道, -25V, SOT-23

INFINEON

晶体管, MOSFET, P沟道, 13 A, -150 V, 290 mohm, -10 V, -4 V

NEXPERIA

单晶体管 双极, PNP, -30 V, 165 MHz, 600 mW, -3 A, 100 hFE

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 55V, 53A TO-247AC

INFINEON

单晶体管, IGBT, 8 A, 1.6 V, 31.2 W, 650 V, TO-220, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 62 A, 200 V, 0.022 ohm, 10 V, 5 V

ON SEMICONDUCTOR/FAIRCHILD

MOSFET, N CHANNEL, 60V, 0.0046OHM, 80A, TO-263AB-3

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 76 A, 650 V, 0.036 ohm, 10 V, 5 V

INFINEON

晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0021 ohm, 10 V, 2.2 V

ON SEMICONDUCTOR

场效应管, MOSFET, N沟道, 58A, 100V

INFINEON

单晶体管, IGBT, N通道, 11.5 A, 3.01 V, 34 W, 600 V, TO-220FP, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 69 A, 100 V, 0.0099 ohm, 10 V, 1.84 V

NEXPERIA

晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00182 ohm, 10 V, 1.68 V

NEXPERIA

双极晶体管阵列, NPN, PNP, 20 V, 2.3 W, 7.5 A, 300 hFE, SOIC

INFINEON

晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0126 ohm, 20 V, 4 V

ON SEMICONDUCTOR

达林顿双极晶体管

INFINEON

功率场效应管, MOSFET, N沟道, HEXFET, 60V, 120A, D2PAK

VISHAY

场效应管, MOSFET, P沟道, -200V, 3.8A, SOIC

TEXAS INSTRUMENTS

晶体管, MOSFET, P沟道, -2.2 A, -12 V, 0.044 ohm, -4.5 V, -600 mV

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, P沟道, -20V, 3.7A, MICROFET 2X2

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 150V, 43A, TO-220AB

INTERNATIONAL RECTIFIER

场效应管, P通道, MOSFET, -55V, 18A, D-PAK