
INFINEON
晶体管, MOSFET, N沟道, 40 A, 80 V, 0.0062 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1 A, -100 V, 820 mohm, -10 V, -4 V

INFINEON
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.002 ohm, 10 V, 2 V

INFINEON
晶体管, MOSFET, N沟道, 180 A, 30 V, 0.00122 ohm, 10 V, 1.8 V

DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -4.6 A, -30 V, 0.07 ohm, -10 V, -1 V

INFINEON
晶体管, MOSFET, N沟道, 44 A, 120 V, 0.0166 ohm, 10 V, 3 V

INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 55 V, 0.039 ohm, 10 V, 1.6 V

INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0026 ohm, 10 V, 3 V

VISHAY
双路场效应管, MOSFET, 双N沟道, 5.3 A, 60 V, 46 mohm, 10 V, 2.5 V

ON SEMICONDUCTOR
双极晶体管阵列, 双NPN, 40 V, 350 mW, 200 mA, 30 hFE, SOT-963

NEXPERIA
晶体管, MOSFET, P沟道, -2.4 A, -30 V, 0.1 ohm, -10 V, -1.5 V

INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 14.4 A, 100 V, 0.051 ohm, 10 V, 4 V

INFINEON
晶体管, MOSFET, N沟道, 25 A, 250 V, 0.05 ohm, 10 V, 3 V

VISHAY
双路场效应管, MOSFET, N和P沟道, 4.5 A, 20 V, 0.053 ohm, 4.5 V, 600 mV

INFINEON
晶体管, MOSFET, N沟道, 73 A, 40 V, 4.9 mohm, 10 V, 1.2 V