
ROHM
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 0.05 ohm, -4.5 V, -2 V

ROHM
晶体管 双极预偏置/数字, PNP, 双路 PNP, -50 V, -100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率

INFINEON
场效应管, MOSFET

VISHAY
晶体管, P沟道

NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 30 V, 2950 μohm, 10 V, 1.7 V

ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.29 ohm, 10 V, 3 V

ROHM
单晶体管 双极, PNP, -80 V, 380 MHz, 500 mW, -700 mA, 120 hFE

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 96 A, 650 V, 0.019 ohm, 10 V, 4 V

INFINEON
晶体管, IGBT, 600V

ROHM
晶体管 双极预偏置/数字, PNP, 单路PNP, -50 V, -100 mA, 22 kohm, 22 kohm, 1 电阻比率

ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 600V, 9.3OHM, 1A, TO-252-3