NEXPERIA

单晶体管 双极, NPN, 45 V, 100 MHz, 900 mW, 500 mA, 250 hFE

VISHAY

场效应管, MOSFET, N沟道, 60V, 8A, SOIC

ON SEMICONDUCTOR

单晶体管 双极, N沟道, 30 A, 40 V, 0.0076 ohm, 10 V, 3.5 V

DIODES INC.

单晶体管 双极, NPN, 20 V, 100 MHz, 600 mW, 500 mA, 220 hFE

INFINEON

单晶体管, IGBT, 80 A, 1.85 V, 428 W, 600 V, TO-247, 3 引脚

ROHM

晶体管 双极预偏置/数字, NPN+PNP, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率

NEXPERIA

晶体管, MOSFET, N沟道, 120 A, 55 V, 3.3 mohm, 10 V, 2.3 V

ROHM

晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.044 ohm, 10 V, 2.5 V

INFINEON

晶体管, MOSFET, N沟道, 27 A, 55 V, 45 mohm, 10 V, 2 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 2.2 A, 500 V, 1.22 ohm, 10 V, 3.75 V

ON SEMICONDUCTOR

单晶体管 双极, 通用, PNP, 60 V, 75 MHz, 625 mW, 2 A, 75 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 44 A, 55 V, 16 mohm, 10 V, 2.3 V

INFINEON

单晶体管, IGBT, 20 A, 360 V, 34 W, 360 V, TO-220FP, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD

场效应管, JFET, N沟道, -25V, SOT-23

INFINEON

单晶体管, IGBT, 40 A, 1.65 V, 255 W, 650 V, TO-247, 3 引脚

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.32 ohm, 10 V, 3 V

INFINEON

场效应管, MOSFET, N沟道, 40V, 195A, TO-263AB-3

INFINEON

晶体管, MOSFET, N沟道, 42 A, 55 V, 0.0058 ohm, 10 V, 2 V

INFINEON

场效应管, MOSFET, N沟道, 55V, 75A, D2-PAK

ROHM

功率场效应管, MOSFET, N沟道, 4 A, 600 V, 0.9 ohm, 10 V, 4 V

INTERNATIONAL RECTIFIER

晶体管, IGBT, 单路, 1.65V, 47A, TO-247AC

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 45.8 A, 600 V, 0.0575 ohm, 10 V, 3 V

VISHAY

MOSFET, P CHANNEL, -30V, -35A, POWERPAK 1212-8

INTERNATIONAL RECTIFIER

场效应管, N通道, MOSFET, 400V, 5.5A, TO-204AA

INFINEON

晶体管, IGBT, 单路, 1.6V, 65A, TO-247AD