ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, P沟道, -30V, 0.069Ω, 3A, SOIC-8

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 1.4 A, 600 V, 8 ohm, 10 V, 3.75 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 15 V, 350 mW, 200 mA, 40 hFE

DIODES INC.

单晶体管 双极, NPN, 30 V, 140 MHz, 1.6 W, 7 A, 200 hFE

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 600V, 0.081Ω, 36A, TO-263-3

INFINEON

单晶体管, IGBT, 50 A, 1.65 V, 305 W, 650 V, TO-247, 3 引脚

INFINEON

场效应管, MOSFET, N沟道, 30V, 8.8A, 6-PQFN

ON SEMICONDUCTOR

场效应管, MOSFET, N沟道, 60V, 60A, D2-PAK

VISHAY

双路场效应管, MOSFET, 双N沟道, 5 A, 40 V, 0.048 ohm, 10 V, 2.2 V

INTERNATIONAL RECTIFIER

场效应管, MOSFET

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 80 A, 600 V, 0.077 ohm, 10 V, 5 V

ROHM

晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率

ROHM

双路场效应管, MOSFET, 双P沟道, 200 mA, -20 V, 0.8 ohm, -4.5 V, -1 V

ROHM

双路场效应管, MOSFET, 双N沟道, 27 A, 30 V, 0.0067 ohm, 10 V, 2.5 V

ROHM

单晶体管 双极, NPN, 80 V, 100 MHz, 200 mW, 100 mA, 100 hFE

NEXPERIA

双极晶体管阵列, 通用, NPN, PNP, 40 V, 200 mW, 100 mA, 120 hFE, SOT-666

ROHM

双路场效应管, MOSFET, N和P沟道, 4.5 A, 30 V, 0.025 ohm, 10 V, 2.5 V

ROHM

双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.022 ohm, 10 V, 2.5 V

ROHM

双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 0.02 ohm, 10 V, 2.5 V

ROHM

功率场效应管, MOSFET, N沟道, 4 A, 600 V, 0.9 ohm, 10 V, 4 V

ROHM

功率场效应管, MOSFET, N沟道, 7 A, 600 V, 0.57 ohm, 10 V, 5 V

ROHM

功率场效应管, MOSFET, N沟道, 8 A, 600 V, 0.73 ohm, 10 V, 4 V

ROHM

功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.34 ohm, 10 V, 4 V

ROHM

功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.39 ohm, 10 V, 5 V

ROHM

功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.26 ohm, 10 V, 4 V