IXYS SEMICONDUCTOR

功率场效应管, MOSFET, X2-Class, N沟道, 4 A, 650 V, 0.85 ohm, 10 V, 5 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, X2-Class, N沟道, 8 A, 650 V, 0.5 ohm, 10 V, 5 V

MICROCHIP

晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0018 ohm, 4.5 V, 1.3 V

MICROCHIP

晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0022 ohm, 4.5 V, 1.3 V

MICROCHIP

晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0028 ohm, 10 V, 1.3 V

MICROCHIP

晶体管, MOSFET, N沟道, 48 A, 25 V, 0.01 ohm, 4.5 V, 1.35 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 6.5 A, 600 V, 0.63 ohm, 10 V, 3 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 110 A, 600 V, 0.056 ohm, 10 V, 5 V

ON SEMICONDUCTOR

单晶体管, IGBT, 80 A, 2 V, 260 W, 1.2 kV, TO-247, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 51 A, 55 V, 0.0111 ohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, N沟道, 200 A, 30 V, 3 mohm, 10 V, 2.5 V

ROHM

单晶体管 双极, PNP, 32 V, 100 MHz, 1 W, 2 A, 82 hFE

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, X2-Class, N沟道, 8 A, 650 V, 0.5 ohm, 10 V, 5 V

VISHAY

晶体管, P沟道

VISHAY

场效应管, MOSFET, N沟道, 600V, 33A, TO-247AC-3

DIODES INC.

晶体管, MOSFET, 增强模式, N沟道, 11.6 A, 30 V, 0.007 ohm, 10 V, 1.5 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, X2-Class, N沟道, 2 A, 650 V, 2.3 ohm, 10 V, 5 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 2.5 A, 525 V, 2.1 ohm, 10 V, 3.75 V

INFINEON

晶体管, MOSFET, N沟道, 17 A, 200 V, 165 mohm, 10 V, 5.5 V

INTERNATIONAL RECTIFIER

晶体管, IGBT, 600V, 96A

NXP

射频晶体管, NPN

INFINEON

晶体管, IGBT, 1.65V, 36A

INFINEON

单晶体管, IGBT, N通道, 140 A, 1.7 V, 454 W, 600 V, TO-247AD, 3 引脚

INFINEON

场效应管, MOSFET, N沟道, HEXFET, 30V, 8.2A, TSOP-6

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 2.2 kohm, 2.2 kohm