ROHM

晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 47 kohm, 47 kohm

INFINEON

晶体管, MOSFET, P沟道, -31 A, -55 V, 65 mohm, -10 V, -4 V

INFINEON

晶体管, MOSFET, N沟道, 85 A, 75 V, 0.0056 ohm, 10 V, 3.7 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 12 A, 500 V, 0.5 ohm, 10 V, 5.5 V

STMICROELECTRONICS

单晶体管 双极, PNP, 80 V, 50 MHz, 12.5 W, 3 A, 50 hFE

ROHM

功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.22 ohm, 10 V, 5 V

ROHM

晶体管 双极预偏置/数字, 双路, 双路 PNP, 50 V, -100 mA, 2.2 kohm, 47 kohm

ROHM

晶体管 双极预偏置/数字, 双路 PNP, 50 V, -100 mA, 2.2 kohm, 47 kohm

ROHM

晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 22 kohm, 22 kohm

ROHM

晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 10 kohm

ROHM

晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 47 kohm, 47 kohm

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 97 A, 25 V, 0.0039 ohm, 4.5 V, 1.1 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 28 A, 600 V, 0.26 ohm, 10 V, 5 V

ON SEMICONDUCTOR

单晶体管 双极, 通用, PNP, -100 V, 3 MHz, 15 W, -3 A, 10 hFE

VISHAY

晶体管, 场效应管, MOSFET, P沟道, -12V, -10.2A, 微型FOOT-4

DIODES INC.

单晶体管 双极, POWERDI?5, NPN, 100 V, 130 MHz, 3.2 W, 6 A, 230 hFE

VISHAY

晶体管, MOSFET, N沟道, 12 A, 60 V, 0.017 ohm, 10 V, 2 V

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 40V, 100A, TO-220AB

NEXPERIA

晶体管, MOSFET, N沟道, 77 A, 40 V, 0.0062 ohm, 10 V, 3 V

SOLID STATE

TRANSISTOR, 30V, 0.05A, 0.45W, TO-5

IXYS SEMICONDUCTOR

晶体管, IGBT阵列&模块, 双N沟道, 30 A, 1.9 V, 100 W, 600 V, i4-PAC

FUJI ELECTRIC

功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.059 ohm, 10 V, 3 V

INFINEON

晶体管, IGBT, 单路, 1.6V, 76A, TO-247AD

INFINEON

单晶体管, IGBT, N通道, 90 A, 1.7 V, 325 W, 650 V, TO-247AC, 3 引脚

INFINEON

单晶体管, IGBT, N通道, 140 A, 1.7 V, 455 W, 650 V, TO-247AD, 3 引脚