
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 26 A, 1.2 kV, 0.5 ohm, 10 V, 6.5 V

IXYS SEMICONDUCTOR
晶体管, MOSFET, Q3-Class, N沟道, 80 A, 500 V, 0.065 ohm, 10 V, 6.5 V

IXYS SEMICONDUCTOR
单晶体管, IGBT, 164 A, 2.75 V, 1.04 kW, 1.2 kV, TO-264AA, 3 引脚

VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.231 ohm, 10 V, 4 V

VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 650 V, 0.225 ohm, 10 V, 4 V

INFINEON
晶体管, IGBT阵列&模块, N沟道, 37 A, 1.55 V, 115 W, 600 V, Module

GENESIC SEMICONDUCTOR
单晶体管, IGBT, 硅, 35 A, 1.2 kV, TO-247, 3 引脚

IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 42 A, 600 V, 0.185 ohm, 10 V, 4.5 V

NTE ELECTRONICS
晶体管, NPN, TO-3封装

INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 3 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3 A, 900 V, 4.8 ohm, 10 V, 3.75 V

INFINEON
晶体管, IGBT阵列&模块, N沟道, 45 A, 1.55 V, 150 W, 600 V, Module

IXYS SEMICONDUCTOR
功率场效应管, MOSFET, Q3-Class, N沟道, 18 A, 1 kV, 0.66 ohm, 10 V, 6.5 V

IXYS SEMICONDUCTOR
单晶体管, IGBT, 43 A, 2.1 V, 150 W, 1.2 kV, TO-247AD, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 76 A, 600 V, 0.028 ohm, 10 V, 2 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.6 ohm, 10 V, 3.75 V

INFINEON
晶体管, IGBT阵列&模块, 双NPN, 485 A, 1.55 V, 1.25 kW, 650 V, Module

VISHAY
场效应管, MOSFET, N沟道