NEXPERIA

单晶体管 双极, 开关, PNP, -40 V, 150 MHz, 250 mW, -100 mA, 60 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 5.9 A, 20 V, 31 mohm, 4.5 V, 1.8 V

VISHAY

场效应管, MOSFET, P沟道, -20V, -2.4A, SOT-23, 整卷

VISHAY

晶体管, MOSFET, N沟道, 4.9 A, 30 V, 0.029 ohm, 10 V, 20 V

INFINEON

TRANSISTOR, IGBT MODULES

ON SEMICONDUCTOR/FAIRCHILD

MOSFET, N CHANNEL, 30V, 0.011OHM, 40A, TO-252AA-3

ON SEMICONDUCTOR/FAIRCHILD

MOSFET, N CHANNEL, 150V, 0.0439OHM, 16A,

INFINEON

晶体管, IGBT阵列&模块, N沟道, 150 A, 3.2 V, 780 W, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 225 A, 3.2 V, 1.25 kW, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 310 A, 2 V, 1.25 kW, 1.7 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 320 A, 1.85 V, 1.05 kW, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 370 A, 3.2 V, 1.95 kW, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 450 A, 1.75 V, 1.6 kW, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 370 A, 3.2 V, 1.95 kW, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 100 A, 1.45 V, 335 W, 600 V, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 60 A, 1.45 V, 190 W, 600 V, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 100 A, 1.45 V, 335 W, 600 V, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 75 A, 1.7 V, 280 W, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 105 A, 1.7 V, 355 W, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 650 A, 1.7 V, 2.25 kW, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 900 A, 1.7 V, 2.8 kW, 1.2 kV, Module

INFINEON

晶体管, MOSFET, N沟道, 94 A, 55 V, 7.5 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 110 A, 20 V, 6 mohm, 10 V, 3 V

IXYS SEMICONDUCTOR

单晶体管 双极, Q3-Class, N沟道, 63 A, 500 V, 0.065 ohm, 10 V, 6.5 V

ON SEMICONDUCTOR

双极性晶体管