NTE ELECTRONICS

双极性晶体管, 达林顿, PNP, 100V V(BR)CEO,8A I(C),TO-220VAR

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 10 kohm, 10 kohm

VISHAY

晶体管, MOSFET, N沟道, 24 A, 30 V, 0.0048 ohm, 10 V, 2.2 V

INFINEON

双路场效应管, MOSFET, 双N沟道, 2.6 A, 60 V, 0.12 ohm, 4.5 V, 1.6 V

INFINEON

晶体管, IGBT阵列&模块, N沟道, 70 A, 3.2 V, 355 W, 1.2 kV, Module

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双P沟道, -1.9 A, -20 V, 127 mohm, -4.5 V, -900 mV

INFINEON

晶体管, IGBT阵列&模块, N沟道, 295 A, 1.7 V, 1.05 kW, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 995 A, 1.75 V, 4.05 kW, 1.2 kV, Module

STMICROELECTRONICS

单晶体管 双极, PNP, -30 V, 100 MHz, 500 mW, -1.5 A, 560 hFE

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 97 A, 25 V, 3.9 mohm, 8 V, 1.1 V

TEXAS INSTRUMENTS

晶体管, MOSFET, P沟道, 60 A, -20 V, 0.0088 ohm, -4.5 V, 850 mV

INFINEON

晶体管, IGBT阵列&模块, N沟道, 340 A, 1.95 V, 1.5 kW, 1.7 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 620 A, 2 V, 2.25 kW, 1.7 kV, Module

NEXPERIA

晶体管, MOSFET, N沟道, 5.4 A, 30 V, 35 mohm, 10 V, 1.5 V

VISHAY

晶体管, JFET, -40V, TO-236, 整卷

INFINEON

晶体管, MOSFET, N沟道, 75 A, 30 V, 0.007 ohm, 10 V, 1 V

INFINEON

晶体管, IGBT阵列&模块, 双NPN, 520 A, 1.75 V, 2.4 kW, 1.2 kV, Module

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, SOT-223, SMD, 1.5A, 100V

IXYS SEMICONDUCTOR

单晶体管 双极, N沟道, 40 A, 600 V, 0.14 ohm, 10 V, 5.5 V

NTE ELECTRONICS

双极性晶体管, NPN, 325V, TO-3

ON SEMICONDUCTOR

场效应管, MOSFET, P沟道, -20V, 1A, SOT-23

SEMIKRON

晶体管, IGBT阵列&模块, 双N沟道, 313 A, 1.8 V, 1.2 kV, Module

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 22 A, 250 V, 55 mohm, 10 V, 3 V

NEXPERIA

单晶体管 双极, 通用, PNP, -65 V, 100 MHz, 250 mW, -100 mA, 125 hFE

NEXPERIA

晶体管, N沟道, DMOS FET, 20V, 1.05A, 3-SOT-23, 整卷