
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 30 V, 0.0006 ohm, 10 V, 1.9 V

INFINEON
晶体管, IGBT阵列&模块, N沟道, 560 A, 1.55 V, 1.45 kW, 650 V, Module

INFINEON
晶体管, IGBT阵列&模块, N沟道, 700 A, 1.55 V, 1.8 kW, 650 V, Module

INFINEON
晶体管, IGBT阵列&模块, N沟道, 950 A, 1.75 V, 3.35 kW, 1.2 kV, Module

IXYS SEMICONDUCTOR
晶体管, IGBT阵列&模块, N沟道, 90 A, 2.2 V, 190 W, 1.2 kV, Y4-M5

ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 8 ohm, 10 V

NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 10 kohm, 10 kohm, 1 电阻比率

STMICROELECTRONICS
单晶体管, IGBT, 80 A, 2.8 V, 240 W, 1.2 kV, TO-247, 3 引脚

BROADCOM LIMITED
晶体管, 射频FET, 高线性度, 7 V, 300 mA, 1 W, 50 MHz, 6 GHz, SOT-89

ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -200V, 0.54Ω, -7.3A, TO-263-3

INFINEON
晶体管, MOSFET, N沟道, 180 A, 75 V, 3.8 mohm, 10 V, 4 V

INFINEON
单晶体管, IGBT, 140 A, 1.7 V, 450 W, 650 V, TO-247AC, 3 引脚

MICROSEMI
射频场效应管, 130V, M174

ON SEMICONDUCTOR
单晶体管 双极, NPN, 25 V, 100 MHz, 225 mW, 500 mA, 40 hFE